Research status of MoSe2 and its composites: A review

Wu, Xin; Wang, Yuhua; Li, Peiling; Xiong, Zu-zhao

doi:10.1016/j.spmi.2020.106388

Cited by 37 publications

(12 citation statements)

References 116 publications

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“…Recently, two-dimensional, layered structure transition metal dichalcogenides (TMDs), such as MoS 2 , WS 2 , and MoSe 2 have garnered significant attention for enhancing the performance of ZnO-based UV photodetectors. TMD materials exhibit unique characteristics, such as a tunable band gap dependent on their number of layers, and a tunable exciton binding energy ranging from 0.5 to 1 eV. − Furthermore, at room temperature, the electron mobility of, e.g., MoS 2 and MoSe 2 can reach up to ∼100 and ∼200 cm 2 /(V·s), respectively . The integration of two-dimensional TMDs into heterostructures with ZnO for photodetectors has been reported to yield higher performance compared to pure ZnO counterparts. , The improved performance is generally attributed to the higher electrical conductivity of the TMD materials, efficient electron transfer between the two materials that suppresses the exciton recombination, and the enhanced local electromagnetic field in the TMD, thereby improving the light-absorbing capability of pristine ZnO …”

Section: Introductionmentioning

confidence: 99%

MoSe₂ Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

Putri,

Dwiputra,

Winata

et al. 2024

ACS Appl. Nano Mater.

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Zinc oxide (ZnO) nanostructures are extensively used as active materials for ultraviolet (UV) photodetectors, but the high dark current arising from intrinsic defects limits their performance. An emerging strategy to alleviate such problems includes the formation of heterostructures with transition metal dichalcogenides (TMDs), which until today have been limited to their two-dimensional structures, leaving the superior physicochemical properties in their quantum dot (QD) configuration untapped. Here, we devise a strategy to reduce surface defects by decorating ZnO nanorods with MoSe2 QDs fabricated through pulsed-laser ablation, using a facile spin-coating method. Through various surface and optical characterizations, we confirm the formation of heterostructures, wherein MoSe2 reduces the number of vacancy defects in the ZnO. As a result, when used as a UV photodetector, the heterostructures exhibit a simultaneous 51% decrease in dark current and 79% increase in photocurrent, i.e., a 4-fold sensitivity compared to the pure ZnO counterpart. Our study presents a strategy to enhance UV photodetector efficiency by utilizing metal oxide/quantum dot heterostructures produced through a facile method. In a broader context, it underscores the efficacy of quantum dot-based heterostructures in optimizing optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

MoSe₂ Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

Putri,

Dwiputra,

Winata

et al. 2024

ACS Appl. Nano Mater.

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“…Global pollution and climate change are worldwide problems that have been exacerbated by the rapid increase in the use of fossil fuels in recent years. − To address these problems, it is important to find alternative energy sources such as hydrogen (H 2 ), which is an ideal clean fuel but needs effective processes to produce from hydrocarbons or water. − The hydrogen evolution reaction (HER) process at the cathode of the sustainable water splitting pathway has attracted attention for the future of renewable energy in large-scale hydrogen production due to the simple technical equipment and low required cost . Black phosphorus, transition-metal oxides/hydroxides, carbon-based materials (such as graphene and graphene oxide), and transition-metal dichalcogenides are considered as the conventional HER electrochemical catalysts and stand out among the many HER electrocatalysts that do not use noble metals.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Hydrogen Evolution Performance at the Lateral Interface between Two Layered Materials Predicted with Machine Learning

Pham

Kim

Min

et al. 2023

ACS Appl. Mater. Interfaces

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While economical and effective catalysts are required for sustainable hydrogen production, low-dimensional interfacial engineering techniques have been developed to improve the catalytic activity in the hydrogen evolution reaction (HER). In this study, we used density functional theory (DFT) calculations to measure the Gibbs free energy change (ΔG H) in hydrogen adsorption in two-dimensional lateral heterostructures (LHSs) MX2/M’X’2 (MoS2/WS2, MoS2/WSe2, MoSe2/WS2, MoSe2/WSe2, MoTe2/WSe2, MoTe2/WTe2, and WS2/WSe2) and MX2/M’X’ (NbS2/ZnO, NbSe2/ZnO, NbS2/GaN, MoS2/ZnO, MoSe2/ZnO, MoS2/AlN, MoS2/GaN, and MoSe2/GaN) at several different positions near the interface. Compared to the interfaces of LHS MX2/M’X’2 and the surfaces of the monolayer MX2 and MX, the interfaces of LHS MX2/M’X’ display greater hydrogen evolution reactivity due to their metallic behavior. The hydrogen absorption is stronger at the interfaces of LHS MX2/M’X’, and that facilitates proton accessibility and increases the usage of catalytically active sites. Here, we develop three types of descriptors that can be used universally in 2D materials and can explain changes in ΔG H for different adsorption sites in a single LHS using only the basic information of the LHSs (type and number of neighboring atoms to the adsorption points). Using the DFT results of the LHSs and the various experimental data of atomic information, we trained machine learning (ML) models with the chosen descriptors to predict promising combinations and adsorption sites for HER catalysts among the LHSs. Our ML model achieved an R 2 score of 0.951 (regression) and an F 1 score of 0.749 (classification). Furthermore, the developed surrogate model was implemented to predict the structures in the test set and was based on confirmation from the DFT calculations via ΔG H values. The LHS MoS2/ZnO is the best candidate for HER among 49 candidates considered using both DFT and ML models because it has a ΔG H of −0.02 eV on top of O at the interface position and requires only −171 mV of overpotential to obtain the standard current density (10 A/cm2).

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“…6 There are various methods to synthesize monolayer and fewlayer MoSe 2 , including mechanical exfoliation, liquid-phase exfoliation, ion insertion, molecular beam epitaxy, hydrothermal methods, and chemical vapor deposition. 7,8 Among these, chemical vapor deposition is one of the preferred methods which provides high quality, large area, uniform thickness, and desired morphology of MoSe 2 akes. [9][10][11] However the optimization of monolayer MoSe 2 becomes challenging due to poor chemical reactivity of selenium (Se) in comparison to sulfur (S).…”

Section: Introductionmentioning

confidence: 99%

Role of processing parameters in CVD grown crystalline monolayer MoSe₂

Papanai

Sahoo

et al. 2022

RSC Adv.

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Research status of MoSe2 and its composites: A review

Cited by 37 publications

References 116 publications

MoSe₂ Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

MoSe₂ Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

Enhanced Hydrogen Evolution Performance at the Lateral Interface between Two Layered Materials Predicted with Machine Learning

Role of processing parameters in CVD grown crystalline monolayer MoSe₂

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Research status of MoSe2 and its composites: A review

Cited by 37 publications

References 116 publications

MoSe2 Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

MoSe2 Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

Enhanced Hydrogen Evolution Performance at the Lateral Interface between Two Layered Materials Predicted with Machine Learning

Role of processing parameters in CVD grown crystalline monolayer MoSe2

Contact Info

Product

Resources

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MoSe₂ Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

MoSe₂ Quantum Dots Enhance the Performance of ZnO Nanostructure-Based UV Photodetectors

Role of processing parameters in CVD grown crystalline monolayer MoSe₂