Topological insulators (TIs) are a new type of electronic materials in which the nontrivial insulating bulk band topology governs conducting boundary states with embedded spin-momentum locking. Such edge states are more robust in a two-dimensional (2D) TI against scattering by nonmagnetic impurities than in its three-dimensional (3D) variant, because in 2D the two helical edge states are protected from the only possible backscattering. This makes the 2D TI family a better candidate for coherent spin transport and related applications. While several 3D TIs are already synthesized experimentally, physical realization of 2D TI is so far limited to hybrid quantum wells with a tiny bandgap that does not survive temperatures above 10 K. Here, combining first-principles calculations and scanning tunneling microscopy/spectroscopy (STM/STS) experimental studies, we report nontrivial 2D TI phases in 2-monolayer (2-ML) and 4-ML Bi(110) films with large and tunable bandgaps determined by atomic buckling of Bi(110) films. The gapless edge states are experimentally detected within the insulating bulk gap at 77 K. The band topology of ultrathin Bi(110) films is sensitive to atomic buckling. Such buckling is sensitive to charge doping and could be controlled by choosing different substrates on which Bi(110) films are grown.

Cesium lead halide perovskite nanowires have emerged as promising low-dimensional semiconductor structures for integrated photonic applications. Understanding light-matter interactions in a nanowire cavity is of both fundamental and practical interest in designing low-power-consumption nanoscale light sources. In this work, high-quality in-plane aligned halide perovskite CsPbX (X = Cl, Br, I) nanowires are synthesized by a vapor growth method on an annealed M-plane sapphire substrate. Large-area nanowire laser arrays have been achieved based on the as-grown aligned CsPbX nanowires at room temperature with quite low pumping thresholds, very high quality factors, and a high degree of linear polarization. More importantly, it is found that exciton-polaritons are formed in the nanowires under the excitation of a pulsed laser, indicating a strong exciton-photon coupling in the optical microcavities made of cesium lead halide perovskites. The coupling strength in these CsPbX nanowires is dependent on the atomic composition, where the obtained room-temperature Rabi splitting energy is ∼210 ± 13, 146 ± 9, and 103 ± 5 meV for the CsPbCl, CsPbBr, and CsPbI nanowires, respectively. This work provides fundamental insights for the practical applications of all-inorganic perovskite CsPbX nanowires in designing light-emitting devices and integrated nanophotonic systems.

The stability and formation of a perovskite structure is dictated by the Goldschmidt tolerance factor as a general geometric guideline. The tolerance factor has limited the choice of cations (A) in 3D lead iodide perovskites (APbI 3 ), an intriguing class of semiconductors for high-performance photovoltaics and optoelectronics. Here, we show the tolerance factor requirement is relaxed in 2D Ruddlesden–Popper (RP) perovskites, enabling the incorporation of a variety of larger cations beyond the methylammonium (MA), formamidinium, and cesium ions in the lead iodide perovskite cages for the first time. This is unequivocally confirmed with the single-crystal X-ray structure of newly synthesized guanidinium (GA)-based ( n -C 6 H 13 NH 3 ) 2 (GA)Pb 2 I 7 , which exhibits significantly enlarged and distorted perovskite cage containing sterically constrained GA cation. Structural comparison with ( n -C 6 H 13 NH 3 ) 2 (MA)Pb 2 I 7 reveals that the structural stabilization originates from the mitigation of strain accumulation and self-adjustable strain-balancing in 2D RP structures. Furthermore, spectroscopic studies show a large A cation significantly influences carrier dynamics and exciton–phonon interactions through modulating the inorganic sublattice. These results enrich the diverse families of perovskite materials, provide new insights into the mechanistic role of A-site cations on their physical properties, and have implications to solar device studies using engineered perovskite thin films incorporating such large organic cations.

Semiconducting p–n heterojunctions, serving as the basic unit of modern electronic devices, such as photodetectors, solar-energy conversion devices, and light-emitting diodes (LEDs), have been extensively investigated in recent years. In this work, high performance self-powered broad-band photodetectors were fabricated based on vertically stacked p–n heterojunctions though combining p-type WSe2 with n-type Bi2Te3 via van der Waals (vdW) epitaxial growth. Devices based on the p–n heterojunction show obvious current rectification behaviors in the dark and superior photovoltaic characteristics under light irradiation. A maximum short circuit current of 18 nA and open circuit voltage of 0.25 V can be achieved with the illumination light of 633 nm (power density: 26.4 mW/cm2), which are among the highest values compared with the ever reported 2D vdW heterojunctions synthesized by chemical vapor deposition (CVD) method. Benefiting from the broad-band absorption of the heterostructures, the detection range can be expanded from the visible to near-infrared (375–1550 nm). Moreover, ascribing to the efficient carriers separation process at the junction interfaces, the devices can be further employed as self-powered photodetectors, where a fast response time (∼210 μs) and high responsivity (20.5 A/W at 633 nm and 27 mA/W at 1550 nm) are obtained under zero bias voltage. The WSe2/Bi2Te3 p–n heterojunction-based self-powered photodetectors with high photoresponsivity, fast photoresponse time, and broad spectral response will find potential applications in high speed and self-sufficient broad-band devices.

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