By varying the absorption coefficient and width of an intralipid-India ink solution in a quasi one-dimensional experiment, the transition between the ballistic and the diffusive regimes is investigated. The medium's attenuation coefficient changes abruptly between two different values within a single mean-free-path. This problem is analyzed both experimentally and theoretically, and it is demonstrated that the transition location depends on the scattering coefficient as well as on the measuring solid angle.

The dependence of the transition between the ballistic and the diffusive regimes of turbid media on the experimental solid angle of the detection system is analyzed theoretically and experimentally. A simple model is developed which shows the significance of experimental conditions on the location of the ballistic-diffusive transition. It is demonstrated that decreasing the solid angle expands the ballistic regime; however, this benefit is bounded by the initial Gaussian beam diffraction. In addition, choosing the appropriate wavelength according to the model's principles provides another means of expanding the ballistic regime. Consequently, by optimizing the experimental conditions, it should be possible to extract the ballistic image of a tissue with a thickness of 1 cm.

A simple, affordable method for imaging through biological tissue is investigated. The method consists of (1) imaging with a wavelength that has a relatively small scattering coefficient (1310 nm in this case) and (2) collimated illumination together with (3) focal plane detection to enhance the detection of the ballistic photons relative to the diffusive light. We demonstrate ballistic detection of an object immersed in a 1-cm-thick cuvette filled with 4% Intralipid, which is equivalent to ∼1 to 2 cm of skin tissue. With the same technology, a ballistic image of a 1-mm-wide object in 10-mm-thick chicken breast is also presented.

We describe a new technique for incoherent optical frequency domain spectroscopy (I-OFDS) that does not require measurements of the RF phase spectrum in order to reconstruct the optical spectrum. It is based on the addition of either an optical or electronic reference line to the I-OFDS system. Compared to the spectrum acquired by a regular I-OFDS system, high accuracy (error<1%) is predicted and achieved.

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Optoelectronic chromatic dispersion (OED) has recently been shown to be a significant source of chromatic dispersion in photodiodes. We characterize the OED in a commercial germanium PN-type photodiode and determine the optimum conditions for maximum OED sensitivity and wavelength monitoring. A peak OED sensitivity of 1 deg/nm is measured in a spectral range of 1550–1558 nm with 4 MHz modulation. We also demonstrate an application of OED in fiber Bragg grating (FBG) interrogation. Quasi-static and vibration strains are monitored, with a spectral and strain sensitivity of 1 .25 p m / H z and 1 .08 µ ε / H z , respectively. Photodiode OED can form the basis of inexpensive chip-scale grating-less spectral analysis.

The optoelectronic process of light absorption and current formation in photodiodes is shown to be a significant source of optoelectronic chromatic dispersion (OED). Simple design rules are developed for fabricating a photodiode-based dispersion device that possesses large, small, zero, and either positive or negative OED. The OED parameter is proportional to a spectrally-dependent absorption term α−1dα/dλ . Silicon-based devices are predicted to display significant OED throughout the near IR, while Ge and InGaAs have high OED in the C- and L-bands and 1650 nm region, respectively. The OED of a commercial Ge PN photodiode is measured to be 3460 ps/nm at 1560 nm wavelength with 500 kHz modulation, demonstrating 8 pm spectral resolution with the phase-shift technique. Temperature-tuning of the OED in the Ge photodiode is also demonstrated. The ubiquitous photodiode is a tunable OED device, with applications in high-resolution optical spectroscopy and optical sensing.

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