To cover the working frequency bands of the three mobile carriers of China Mobile, China Telecom, and China Unicom, power amplifiers (PAs) are required to own broadband. A PA with bandwidth 1.3–2.7 GHz is designed (fully covers the operating bands of the three mobile carriers). Measured results show that greater than 68% efficiency is attained over a 75% bandwidth from 1.3 to 2.7 GHz. The output power is larger than 40.2 dBm with gain varying from 10 to 13 dB across the band. In this article, three‐frequency point matching method is applied in order for broadband matching. High‐efficiency is achieved by a specially designed impedance matching topology which realizes short‐circuits of the second harmonics and open‐circuits of the third harmonics at different frequencies. The designed broadband high‐efficiency GaN PA provides a new approach and method for the development of PAs in 4G base stations.
In order to better cover the frequency band of fifth‐generation communication system in sub‐6GHz frequency, a feeding capacitance compensation method is proposed to improve the bandwidth and efficiency of power amplifier (PA). By adding different feeding capacitance at the drain supply voltage network, resonance valley points occurred at different frequencies are compensated to achieve wide bandwidth and high‐efficiency. For validation purpose, a PA prototype is designed with using a 10‐W Cree GaN high electron mobility transistor device. Maximum 64.7% efficiency has been measured over 80% bandwidth from 2.2 to 5.1 GHz, with maximum output power of 13.5 W. The measurement revealed an adjacent channel leakage ratio of better than −50.3 dBc after digital pre‐distortion while being driven with a 40‐MHz orthogonal frequency‐division multiplexing modulated signal with a peak‐to‐average power ratio of 6.5 dB at an average output power of 32.5 dBm.
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