High efficiency broadband GaN HEMT power amplifier based on three‐frequency point matching method

Cheng, Zhiqun; Zhao, Ziming; Ke, Huajie; Li, Guohua; Dong, Zhihua; Gao, Steven

doi:10.1002/mop.30634

Cited by 12 publications

(14 citation statements)

References 12 publications

(10 reference statements)

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“…Therefore, multioctave high-efficiency PA have recently drawn much attention. [3][4][5][6] To achieve the broadband and high efficiency of the PAs, various impedance matching techniques are proposed, but unfortunately, it is difficult to maintain a high efficiency level over a bandwidth above octave. Generally, the highefficiency PAs are normally achieved by using harmonictuned mode topologies, such as Class-F 7,8 and inverse Class-F. 9 To realize high-efficiency, a complex load network is demanded to achieve infinite harmonic terminations, resulting in bandwidth restrictions for the PAs.…”

Section: Introductionmentioning

confidence: 99%

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Design of multioctave power amplifier using multi‐harmonic bilateral pull technique

Xuan

Wang

Zhao

et al. 2020

Micro & Optical Tech Letters

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In this letter, the design, implementation and measurements of a multioctave bandwidth high-efficiency GaN HEMT power amplifier (PA) based on a novel systematic design methodology are presented. To achieve bandwidth expansion while maintaining a high level of efficiency, the multi-harmonic bilateral pull technique has been employed to acquire the optimum fundamental and second harmonic impedance regions. Especially, the impedance region of the second harmonic is analyzed to conclude that the second harmonic impedance can be expanded to a resistive-reactive with complex load impedances. Therefore, multioctave bandwidth can be achieved by combining low-pass lumped circuit (LC) matching network. For experimental verification, the wideband PA is achieved with a 10-W GaN device. The measurement results manifest that the implemented PA has a drain efficiency (DE) of 54% to 71% and a saturated output power of 38.2 to 42.3 dBm for the entire intended frequency range between 0.5 to 3.1 GHz with a relative bandwidth of 144.4%, while providing a gain larger than 8.2 dB. Measurement results confirm the theoretical findings.

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Section: Introductionmentioning

confidence: 99%

“…Meanwhile, the PAs have a great impact on the bandwidth and output power of the system as well. Therefore, multioctave high‐efficiency PA have recently drawn much attention 3‐6 …”

Section: Introductionmentioning

confidence: 99%

Design of multioctave power amplifier using multi‐harmonic bilateral pull technique

Xuan

Wang

Zhao

et al. 2020

Micro & Optical Tech Letters

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“…The rapid development of mobile communications requires the better performance of RF front-end circuits [1,2]. Especially for power amplifiers (PAs), the related characteristics such as bandwidth and efficiency must be greatly improved.…”

Section: Introductionmentioning

confidence: 99%

Design of broadband Class EF power amplifier based on low-pass filter matching structure

Zhang

Cheng

Liu

2019

IEICE Electron. Express

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This paper proposes a broadband Class EF power amplifier based on a low-pass filter matching structure. Based on the theory of Class EF power amplifiers, the optimal fundamental load impedance required is derived. A broadband matching circuit is then designed using a low-pass filter prototype. In the meantime, a compact harmonic control circuit is proposed to meet the harmonic impedance requirements of class EF power amplifiers. In order to validate the effectiveness of the proposed method, a 2.6-3.6 GHz broadband class EF power amplifier is designed and fabricated. Measurement results show that the output power is between 40.68 dBm and 41.6 dBm at 1 dB compression point in 2.6-3.6 GHz. From 62% to 78% drain efficiency is obtained with gain greater than 10 dB.

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“…With the evolution of the modern wireless communication technology, communication systems is required to have higher efficiency and wider operation bandwidth [1,2]. The PA, as one of the most crucial components in the system, is also requested to have the ability of working in multiband.…”

Section: Introductionmentioning

confidence: 99%

Design of broadband high-efficiency power amplifiers based on the harmonic-tuned

Xuan

Yang

2018

IEICE Electron. Express

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A novel methodology for designing broadband high-efficiency power amplifiers (PAs) based on the harmonic-tuned is presented in this letter. All harmonics can be effectively manipulated by the innovative structure to achieve high-efficiency and the dual frequencies point harmonic matching method is also applied to the harmonic control network, which has a positive effect on the expansion bandwidth. To verify the validity of the proposed methodology, a gallium nitride PA is designed, implemented, and measured. Measured results manifest a wide bandwidth from 1.1 to 2.5 GHz, with drain efficiency (DE) of 67-86%, saturated output power greater than 39.5 dBm, and large signal gain larger than 9.5 dB. The in-band second and third harmonic suppression levels are maintained at −13 to −36 dBc and −23 to −44 dBc, respectively. Measurement results confirm the theoretical findings reported in this paper.

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High efficiency broadband GaN HEMT power amplifier based on three‐frequency point matching method

Cited by 12 publications

References 12 publications

Design of multioctave power amplifier using multi‐harmonic bilateral pull technique

Design of multioctave power amplifier using multi‐harmonic bilateral pull technique

Design of broadband Class EF power amplifier based on low-pass filter matching structure

Design of broadband high-efficiency power amplifiers based on the harmonic-tuned

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