Photonic integrated Raman lasers have extended the wavelength range of chip-scale laser sources and have enabled applications including molecular spectroscopy, environmental analysis, and biological detection. Yet, the performance is strongly determined by the pumping condition and Raman shift value of nonlinear medias, leaving challenges to have a widely and continuously tunable Raman laser (e.g., over 100 nm). Here, photonic engineered Raman lasers based on chip-integrated chalcogenide microresonators are demonstrated. The home-developed chalcogenide photonic platform is of high nonlinearity, wide transparency, and low loss. The strong and broadband material Raman response has promised rich dynamics of Raman lasing. Indeed, both single-mode Raman lasing and a broadband Raman-Kerr comb, which are found engineered by tuning the dispersion of the chalcogenide microresonator, are demonstrated. The single-mode Raman laser, together with its cascaded modes, supports a gap-free tuning range over 140 nm, while the threshold power is as low as 3.25 mW. The results may contribute to the understanding of Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to integrated and efficient laser sources that is desired in spectroscopic applications in the infrared.
Integrated nonlinear photonics, combined nonlinear optics with state‐of‐the‐art photonic integration, play a crucial role in chip‐integrated technologies including optical frequency combs, molecular spectroscopy, and quantum optics. Optical materials with favorable properties are the foundation to promote integrated photonic devices with bandwidth, efficiency, and flexibility in high‐volume chip‐scale fabrication. In this work, a newly developed chalcogenide glass‐Ge25Sb10S65 (GeSbS) is presented for nonlinear photonic integration and for dissipative soliton microcomb generation. The GeSbS features wide transparency (0.5–10 µm), strong nonlinearity (1.3 × 10−18 m2 W−1), and low thermo‐refractive coefficient (3.1 × 10−5 K−1), and is complementary metal oxide semiconductor (CMOS)‐compatible in fabrication. In this platform, chip‐integrated optical microresonators with an average intrinsic quality (Q) factor of ≈1.97 × 106 are implemented, and lithographically controlled dispersion engineering is carried out. In particular, both a bright soliton‐based microcomb with bandwidth of 240 nm (≈1440–1680 nm) and a dark‐pulse comb with bandwidth of 80 nm (≈1510–1590 nm) are generated in a single microresonator in its separated fundamental polarized mode families.The ten‐milliwatt level of soliton microcomb operation power facilitates the monolithically integrated photonic circuits. The results provide a potential material platform for integrated nonlinear photonics for highly compact and high‐intensity nonlinear interactions in visible and infrared regions.
We present a novel approach to modify the specific mode frequency in chalcogenide microring resonators and demonstrate an efficient and widely tunable optical parametric oscillation, which is independent of geometry dispersion engineering.
We first propose and experimentally demonstrate the engineered Raman-Kerr microcomb by adjusting the gains between Raman and Kerr effects in an integrated chalcogenide microresonator, leading to controllable approaches for optical frequency synthesizers.
Mid-infrared (MIR) frequency combs based on integrated photonic microresonators (micro combs) have attracted increasing attention in chip-scale spectroscopy due to their high spectral resolution and broadband wavelength coverage. However, up to date, there are no perfect solutions for the effective generation of MIR micro combs because of the lack of proper MIR materials as the core and cladding of the integrated microresonators, thereby hindering accurate and flexible dispersion engineering. Here, we have firstly demonstrated a MIR micro comb generation covering from 6.94 μm to 12.04 μm based on a sandwich-integrated all-ChG microresonator composed of GeAsTeSe and GeSbSe as the core and GeSbS as cladding. The novel sandwich microresonator is proposed to achieve a symmetrically uniform distribution of the mode field in the microresonator core, precise dispersion engineering, and low optical loss, which features a wide transmission window, high Kerr nonlinearity, and hybrid-fabrication flexibility on a silicon wafer. A MIR Kerr frequency comb with a 5.1 μm bandwidth has been numerically demonstrated, assisted by dispersive waves. Additionally, a feasible fabrication scheme is proposed to realize the on-demand ChG microresonators. These demonstrations characterize the advantages of integrated ChG photonic devices in MIR nonlinear photonics and their potential applications in MIR spectroscopy.
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