Articles you may be interested inResidual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates Effect of growth temperature on the characteristics of ZnO films grown on Si(111) substrates by metal-organic chemical vapor deposition

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Field electron emission of GaN-filled carbon nanotubes, grown by microwave plasma enhanced chemical vapor deposition, was investigated. The detailed structural characterization shows that the filled nanotube has a GaN-core/C-shell structure, in which the GaN wire corresponds to a wurtzite structure. The field emission properties of the GaN-filled carbon nanotubes have been achieved with high and stable emission current. It is attributed to the unique cable-like structure, which makes the GaN-core/C-shell composite mechanically solid and chemically stable. This study suggests the GaN-filled carbon nanotube as an ideal candidate for future high-current and high-power field emitter applications.

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