In this work, we for the first time investigate GeP5 as an anode material for lithium ion batteries (LIB). By a facile high energy mechanical ball milling (HEMM) method, we successfully synthesize pure GeP5 and GeP5/C nanocomposite at ambient temperature and pressure. According to XRD Rietveld refinement and first principle calculation, GeP5 holds an two-dimensional layered structure similar to black P and graphite, a high conductivity as 10000 and 10 times of black P and graphite, respectively. Serving as novel anode materials, both GeP5 and its carbon composite deliver an unprecedented high reversible capacity of ca. 2300 mA h g -1 , combined with a high initial coulombic efficiency of ca. 95%. Ex-situ XRD and CV tests demonstrate GeP5 undergoes conversion and alloying type lithium storage mechanism that its capacity is cocontributed by both Ge and P components. In addition, GeP5/C exhibits superior cycle stability and excellent high-rate performance with a capacity of 2127 mA h g -1 at 5 A g -1 , suggesting their promising application in next-generation highenergy and high-power LIB.
Broad visible photodetectors based on individual Pb ion exchanged CdS nanowires are reported. They are prepared via an ion exchange reaction initiated on the surface of CdS nanowires with a further diffusion of ionic reactants. The broadening of the response spectrum is relative to electronic band structure transition caused by the tensile strain in the lattice.
Microwave-promoted pure host phase for red emission CaS:Eu 2+ phosphor from single CaSO 4 precursor and the photoluminescence property * Ma Jian(马 健) a) , Lu Qi-Fei(陆启飞) a)b) † , Wang Yan-Ze(王延泽) a) , Lu Zhi-Juan(卢志娟) a) , Sun Liang(孙 亮) a) , Dong Xiao-Fei(董晓菲) a) , and Wang Da-Jian(王达健) a)b)c) ‡
Three kinds of 2,5,-diphenyl-dithienol[2, 3-b: 3′, 2′-d]thiophene (DP-DTT), 2,5,-distyryl-dithienol[2, 3-b: 3′, 2′-d]thiophene (DEP-DTT) and 2,5,-thienyl-dithienol[2, 3-b: 3′, 2′-d]thiophene (DET-DTT) micro-region structure and electronic properties were studied. Thin films of these functionalized DTT oligomers were prepared in a one-step drop-casting deposition onto highly oriented pyrolytic graphite substrates. The surface structure of these films was characterized by atomic force microscopy (AFM). Conducting probe atomic force microscope (C-AFM) and Kelvin probe force microscope (KFM) were both used to characterize the electronic transport behavior and surface potential distribution. The substituents of DTT oligomers can greatly affect their aggregation and the hopping conductance mechanism was used to explain the Au-DTTs-HOPG junctions. KFM investigation revealed that these oligomers with different substituents have different highest occupied molecular orbital energy levels. The corresponding theoretical analysis reveals similar result to KFM characterization. The I-V results indicated that the aggregates of molecules were the dominating factor to their micro-region electrical transport.
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