Strain Driven Spectral Broadening of Pb Ion Exchanged CdS Nanowires

Xing, Xiaonan; Zhang, Qi; Huang, Zhen; Lu, Zhijuan; Zhang, Jianbing; Li, Huiqiao; Zeng, Haibo; Zhai, Tianyou

doi:10.1002/smll.201503044

Cited by 59 publications

(31 citation statements)

References 62 publications

(39 reference statements)

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“…By fitting the photocurrent ( I ph ) to a power function of the white‐light intensity ( P ) according to equation, I ph ∝ P C , C = 0.93, 0.87, 0.75, and 0.41 were obtained for MAPbI 3– x Cl x NFs with x = 0, 0.33, 0.54, and 0.75, respectively. Note that photocurrent should be directly proportional to intensity of the incident light, the sublinear relations are mainly attributed to the complicated processes within semiconductor, including electron–hole generation, trapping, and recombination . In the present case, MAPbI 3 NF exhibits the power dependence of C = 0.93, indicating the trap states are very scarce induced photocurrent linearly proportional to the light intensity .…”

Section: Resultsmentioning

confidence: 60%

“…Note that photocurrent should be directly proportional to intensity of the incident light, the sublinear relations are mainly attributed to the complicated processes within semiconductor, including electron–hole generation, trapping, and recombination . In the present case, MAPbI 3 NF exhibits the power dependence of C = 0.93, indicating the trap states are very scarce induced photocurrent linearly proportional to the light intensity . It is widely accepted that free electrons and holes comprise the excited state of MAPbI 3 under photoexcitation.…”

Section: Resultsmentioning

confidence: 61%

“…We noted that the power dependence of R of MAPbI 3 NF‐based device is −0.07, indicating that the photodetector respositivity would not be influenced by the incident light intensity. In sharp contrast, R of the Cl‐content devices depicted decrease with increased trap density induced by substitution of Cl for I in perovskite MAPbI 3– x Cl x , as the trap states shorten the life time of the photogenerated carriers . This indicates that substitution of Cl for I in perovskite MAPbI 3– x Cl x has a negative impact in photocurrent generation.…”

Section: Resultsmentioning

confidence: 96%

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Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI_3-_xCl_x

Zhang

Liao

Wang

et al. 2016

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Longer carrier diffusion length and improved power conversion efficiency have been reported for thin-film solar cell of organolead mixed-halide perovskite MAPbI3- x Cl x in comparison with MAPbI3 . Instead of substituting I in the MAPbI3 lattice, Cl-incorporation has been shown to mainly improve the film morphology of perovskite absorber. Well-defined crystal structure, adjustable composition (x), and regular morphology, remains a formidable task. Herein, a facile solution-assembly method is reported for synthesizing single-crystalline nanofibers (NFs) of tetragonal-lattice MAPbI3- x Cl x with the Cl-content adjustable between 0 ≤ x ≤ 0.75, leading to a gradual blueshift of the absorption and photoluminescence maxima from x = 0 to 0.75. The photoresponsivity (R) of MAPbI3 NFs keeps almost unchanging at a value independent of the white-light illumination intensity (P). In contrast, R of MAPbI3- x Cl x NFs decreases rapidly with increasing both the x and P values, indicating Cl-substitution increases the recombination traps of photogenerated free electrons and holes. This study provides a model system to examine the role of extrinsic Cl ions in both perovskite crystallography and optoelectronic properties.

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 61%

Section: Resultsmentioning

confidence: 96%

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Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI_3-_xCl_x

Zhang

Liao

Wang

et al. 2016

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“…The relationship between the illumination intensity and illumination power density is shown in Table S1 in the Supporting Information. The responsivities of the CdS photodetector are shown in Figure a, and the comparison diagram of the responsivities in this work and other reported photodetectors such as CdS, ZnO, and CdSe based photodetectors for various wavelength are shown in Figure b …”

Section: Resultsmentioning

confidence: 63%

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Zhao

Liu

et al. 2017

Advanced Optical Materials

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light absorption, [3] as well as the unique optoelectronic properties. [4][5][6][7] Therefore, many researchers are devoted to synthesize various of 1D nanostructures with controllable size, morphology, orientation, and crystallinity. Until now, various 1D nonostructures including nanorods (NRs), nanowires, nanotubes, and nanobelts [4,5,8,9] have been synthesized by many approaches such as chemical vapor deposition (CVD), focused ion beam, vapor-liquid-solid and chemical solutions. [10][11][12][13] Among 1D nanomaterials, 1D nanostructured semiconductor exhibited extensive application in light-emitting diode, transistors, lasers, solar cells, panel displays, field emitters, and photodetector devices. [4,12,14,15] As one of the most important optoelectronic devices, photodetectors can be used to convert the optical signal into electrical signal. Generally, the photodetectors based on 1D nanostructures show high sensitivity, large photocurrent gain, good reliability, and fast response time. [11,16,17] As we know, various 1D semiconductor nanomaterials have been used to fabricate photodetectors such as CdS, ZnO, ZnS, SnO 2 , WS 2 , CdTe, ZnTe, and In 2 Te 3 . [4,[18][19][20][21][22] It has been concluded that the photoresponse properties of these fabricated detectors are determined critically by a variety of parameters including selected materials, contact type of device, as well as the crystalline quality and dimension.As a significant II-VI chalcogenide semiconductor, wurtzite CdS is a direct bandgap semiconductor with the band energy of 2.42 eV at room temperature. [23] The particular characteristics of CdS such as excellent photoconductivity, good chemical stability, low work function (4.2 eV), and the working in visible spectrum, [24] make CdS become a promising candidate in photodetectors. [25] In recent years, many efforts have been used to improve the performance of the CdS photodetector with the novel type of device structure such as side-gated field-effect transistor. [26,27] While, in the area of the traditional Ohmic contact based photodetectors, many efforts still have been dedicated to improve the quantum efficiency, photoresponse ratio, sensitivity, and response time of 1D CdS nanowires photodetectors. [28][29][30] However, less attention has been paid to improve the responsivity of CdS nanwires photodetector despite it is the important parameter to evaluate the device performance such as the ability of the photoelectric conversion.1D nanoscale photodetectors have been extensively investigated for the unique geometry structure and novel physical and chemical properties. The 1D CdS materials have received much attention in the field due to its high photosensitivity and fast response, while how to achieve high responsivity is still in development, despite it is the crucial target to the excellent photo detector. Single crystal CdS nanorods (NRs) are synthesized on SiO 2 /Si substrate over large scale via the chemical vapor deposition method. The individual single CdS nanorod photodetector have been fabr...

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“…Apparently, bare ZnO nanowires reveal strong absorption under the wavelength below 380 nm while the absorption onset value for CH 3 NH 3 PbI 3 is located at 760 nm, consistent with its near band edge emission. After wrapping CH 3 NH 3 PbI 3 , the hybrid structures may offer a wider absorption range up to 760 nm, hence, highly desirable for the broadband photodetectors across the UV–visible range . Accordingly, the light sensor established on individual CH 3 NH 3 PbI 3 /ZnO hybrid structures is schematically illustrated in Figure b and the SEM image of the whole device is depicted in inset of Figure c.…”

Section: Resultsmentioning

confidence: 99%

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Gao

Zhang

Chen

et al. 2017

Advanced Optical Materials

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light absorption ability, which significantly restrict their practical applications. [8,9] In addition, a growing demand for broadband light communication or imaging sensing requires high-performance photosensitive materials with a broader photoresponse range, particularly UV-visible photodetections through the use of a single detecting element. [10,11] To this point, silicon-based metal-oxide-semiconductor (MOS) structures are industrially used; nevertheless, the large leakage current caused by a very thin oxide layer leads to a serious breakdown in electrical field. [12] Meanwhile, it is still challenging to achieve a photodetector with a broad spectral region relying on a single semiconductor material like ZnO due to its intrinsic electronic band structure. [13,14] Therefore, new strategies are required for the achievement of excellent UV-visible light sensors established on inorganic semiconductors.Recent researches on hybrid heterostructures focusing on organic and inorganic constituents offer an effective approach to design novel optoelectronic elements with tailored and improved properties. [15] Consequently, perovskites, for example, CH 3 NH 3 PbX 3 (X = Cl, Br, I), have drawn growing attention for serving as light-harvesting cells, in particular for photovoltaic devices with an enhanced performance. [16,17] These materials showing many fascinating properties such as the intrinsic ambipolar transport, high optical absorption coefficient in visible spectral region, tunable band gap, high quantum efficiency, and a long carrier diffusion length, are particularly valuable for optoelectronic and photonic devices such as photodetectors. [18,19] However, the synthesis methods reported in previous literatures will inevitably introduce grain boundaries and large morphological variations in the resultant products; this leads to a relatively high dark current density, one of the major barriers for their practical applications. [20] Therefore, "right" semiconductors (transporting layers) should be used to not only suppress the dark current but also to economize the wonderful light absorbing materials (such as a perovskite layer) to accomplish optimal photoconductivity performance. [21][22][23] Inspired by this, the hybrid approach by combining inorganic semiconductors like ZnO nanowires with organolead halide perovskite may provide an alternative route to fabricate photodetectors that are expected to have an improved photosensitivity and broader spectral response. So A hybrid approach by combining inorganic semiconductors with organolead halide perovskite may provide an alternative and competitive route to acquire light harvesting materials that are expected to have an improved photosensitivity and broader spectral response. Here, the first designed CH 3 NH 3 PbI 3 / ZnO photodetectors reveal a distinguished photoelectric performance (responsivity = 4.00 A W −1 , external quantum efficiency = 1300% @380 nm) with fast response times and an available broadband region up to 760 nm as compared to the pure ZnO nanowire ph...

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Strain Driven Spectral Broadening of Pb Ion Exchanged CdS Nanowires

Cited by 59 publications

References 62 publications

Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI_3-_xCl_x

Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI_3-_xCl_x

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

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Strain Driven Spectral Broadening of Pb Ion Exchanged CdS Nanowires

Cited by 59 publications

References 62 publications

Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI3-xClx

Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI3-xClx

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

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Product

Resources

About

Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI_3-_xCl_x

Controlled Substitution of Chlorine for Iodine in Single-Crystal Nanofibers of Mixed Perovskite MAPbI_3-_xCl_x