Two-dimensional MXenes have shown impressive semiconductor-like properties associated with their ultrathin-atomic-layer structure. Herein, ZnO/Ti3C2Tx hybrid structures were fabricated by a simple dipping method. Photodetectors (PDs) made of ZnO/Ti3C2Tx hybrid on glass fiber exhibit significantly enhanced photodetect ability. The responsivity of ZnO/Ti3C2Tx PD is 5.05 A/W when illuminated by 365 nm light (0.28 mW/cm2) at a bias of 5 V, which is 360 times that of ZnO PD (0.014 A/W). The synergistic effect of the formation of the novel heterostructure and the high conductivity of Ti3C2Tx played a major role in the enhanced photodetect performance. The high responsivity of 7.01 A/W and the high external quantum efficiency of 2386% for ZnO/Ti3C2Tx PD give it great potential for a UV light photoswitch and image sensor. This work sheds light on the utilization of two-dimensional MXene materials in high-performance optoelectronic devices.
Correction for ‘A facile method for synthesizing CuS decorated Ti3C2 MXene with enhanced performance for asymmetric supercapacitors’ by Zhihu Pan et al., J. Mater. Chem. A, 2019, DOI: 10.1039/c9ta00085b.
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