The susceptibility to chilling injury (CI) or internal breakdown (IB) was evaluated in the most currently planted yellow- and white-flesh peach [Prunus persica (L.) Batsch] and nectarine [Prunus persica var. nectarine (L.) Batsch] and plum [Prunus salicina Lindel] cultivars from different breeding sources and fruit types. Cultivars were segregated into three categories (Cat. A, B, and C) according to their susceptibility to CI or IB symptoms (mealiness and flesh browning) when exposed to 0 °C or 5 °C storage temperatures. Cultivars in Cat. A did not develop any symptoms of CI after 5 weeks of storage at either temperature. Cultivars in Cat. B developed symptoms only when stored at 5 °C within 5 weeks of storage. Cultivars were classified in Cat. C when fruit developed CI symptoms at both storage temperatures within 5 weeks of storage. Most of the yellow- and white-flesh peach cultivars developed IB symptoms when stored at both storage temperatures (Cat. C). Most of the new nectarine cultivar introductions did not develop CI symptoms when stored at 0 °C or 5 °C after 5 weeks (Cat. A). Three out of six plum cultivars tested had CI symptoms within 5 weeks storage at 0 °C. However, all of the plum cultivars tested developed CI symptoms when stored at 5 °C (Cat. B). The importance of proper temperature management during postharvest handling was demonstrated.

A series of MgxZn1−xO thin films has been prepared by metalorganic chemical vapor deposition and metal-semiconductor-metal structured ultraviolet photodetectors are fabricated from these films. The cutoff wavelengths of the photodetectors can cover the whole solar-blind spectrum range (220–280 nm) by varying Mg content in the MgxZn1−xO thin films. As a representative, the photodetector fabricated from Mg0.52Zn0.48O shows an ultraviolet/visible rejection ratio of about four orders of magnitude, and the dark current is 15 pA at 10 V bias. These results demonstrate that high-performance photodetectors operating in the whole solar-blind spectrum range can be realized in MgxZn1−xO films.

By employing a relatively low growth temperature and oxygen-rich conditions, single-crystalline cubic MgZnO films were prepared. A solar-blind deep ultraviolet (DUV) photodetector was finished on the MgZnO film. The maximum responsivity of the photodetector is 396 mA/W at 10 V bias, which is almost three orders of magnitude larger than the highest value ever reported in MgZnO-based solar-blind photodetectors. The dark current density is 1.5×10−11 A/cm2, comparable with the smallest value ever reported in solar-blind photodetectors. The improved performance reveals that the single-crystalline cubic MgZnO films have great potential applications in DUV optoelectronic devices.

No abstract

No abstract

No abstract

No abstract

No abstract