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Subscript textEr2O3、Tm2O3 and Yb2O3 films were deposited on Si (100) and quartz substrates by radio frequency magnetron technique. The energy gaps of the films were measured by X-ray photoelectron spectroscopy (XPS) and optical methods. The energy gaps of Er2O3、Tm2O3 and Yb2O3 are found to be 6.3±0.1、5.8±0.1 and 7.1±0.1 eV by optical measurements. For XPS measurements, the energy gaps of the films are 6.2±0.2、6.0±0.2 and 6.9±0.2 eV, respectively. The results show that using XPS to measure the energy gap of rare earth metal oxide film is feasible in an allowable deviation.
The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped, well isolated, and uniformly distributed Ni NCs surrounded by NiOx (~1nm) in SiO2 gate oxide. The Ni-NiOx NCs embedded in SiO2 exhibited a large memory window of 9.8 V as well as efficient programming/erasing speed and improved retention characteristics of about 10 years. A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell layer.
Nickel hollow spheres (NHSs) with different diameter have been synthesized by the autocatalytic reduction method. The morphology, size distribution and magnetic properties of NHSs were characterized. The results indicate that when the nickel hollow spheres become smaller, mechanism of magnetization reversal varies from motion of domain wall to spin coherent rotation. After the heat treatment process, the grain size of samples becomes bigger and coercivity is enhanced because domain wall is pinned by local magnetic anisotropy induced spontaneously.
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