The saturation current variability σ(δI
dsat) and lifetime variability in hot carrier injection (HCI) have been investigated for deeply scaled nMOSFETs. It is found that both of them are getting worse with scaling down. The statistical analysis of the large data sets from various CMOS sizes shows that σ(δI
dsat) is dominated by the total number of Poisson-distributed defects generated by HCI stress and the length (L) and width (W) of these devices. We attempt to use a single parameter to accurately describe HCI variability in deeply scaled nMOSFETs.
The worst case stress conditions for hot carrier degradation have been investigated in detail at the devices fabricated with CMOS technologies from 0.35µm to 45nm. In nMOSFETs with long channel devices (L>0.18µm), V g at I bmax and the lowest temperature is the worst case condition; For short channel devices (0.13 µm ≤ L ≤ 0.18μm), V g @ I bmax and V g =V d stress conditions result in comparable hot carrier damage; For the very short channel transistors (L<0.13µm), the worst case stress condition has been found to be V g =V d instead of V g @I bmax . In this case, the higher temperature will induce worse hot carrier degradation. In pMOSFETs, the stress conditions V g @I gmax is the worst case condition for the long channel devices (L≥0.35µm). As the channel length scaled to sub-0.25µm, the worst case stress condition shifts from V g @I gmax to V G = V D .
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.