Physical understanding of hot carrier injection variability in deeply scaled nMOSFETs

Abstract

The saturation current variability σ(δI dsat) and lifetime variability in hot carrier injection (HCI) have been investigated for deeply scaled nMOSFETs. It is found that both of them are getting worse with scaling down. The statistical analysis of the large data sets from various CMOS sizes shows that σ(δI dsat) is dominated by the total number of Poisson-distributed defects generated by HCI stress and the length (L) and width (W) of these devices. We attempt to use a single parameter to accurately describe HCI variability in deeply scaled nMOSFETs.

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

“…Since HCD is driven by the interaction of hot and cold carriers [4,10,11] and is thus determined by the carrier energy distribution function (DF), degradation proceeds with different rates in various samples. This issue has been addressed experimentally [12][13][14][15] and in simulation approaches [16][17][18][19] by different groups. However, all previous simulation approaches only provide a statistical description of HCD based on some phenomenological models which do not reveal the complex physical picture behind HCD which includes also the impact of RDs.…”

Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

“…Nevertheless, there is a very limited number of papers presenting experimental investigations of variability induced by HCD [9,[12][13][14]. The few modeling approaches to HCD variability are limited to phenomenological descriptions and do not address the complex physical picture of HCD [15][16][17][18]. To the best of our knowledge, the only model which employs a physics-based description of HCD variability has been used in a recent paper by Bottini et al [19].…”