Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

Makarov, Alexander; Kaczer, B.; Chasin, Adrian; Vandemaele, Michiel; Bury, E.; Jech, Markus; Grill, Alexander; Hellings, Geert; El-Sayed, Al-Moatasem; Linten, Dimitri; Tyaginov, Stanislav

doi:10.1109/led.2019.2933729

Cited by 10 publications

(6 citation statements)

References 34 publications

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“…So far, we considered the impact of RDs on HCD, while the impact of random traps (RTs) was ignored. However, as we showed in our recent publications [24,26], RTs result in different shapes of ∆I d,lin and τ distributions. Nevertheless, Figure 11 shows that ∆I d,lin (I d,lin ) dependencies obtained considering impacts of both RDs and RTs show the same trends as those curves generated taking only RDs into account.…”

Section: Resultssupporting

confidence: 53%

“…Nevertheless, Figure 11 shows that

and

dependencies obtained considering impacts of both RDs and RTs show the same trends as those curves generated taking only RDs into account. Note that the impact of RTs results in broadening of

distributions, see [ 24 , 26 ], but this trend is a natural consequence to the fact that inclusion of RTs into our modeling approach adds an additional source of variability.…”

Section: Resultsmentioning

confidence: 99%

“…The obtained continuous

densities were also a subject for discretization/randomization [ 24 , 26 ]. In a similar manner as in the case of RDs we multiplied the local

value by the cell area (a cell at the interface is two-dimensional though), thereby obtaining the mean number of traps which was then used in a Poisson randomizer to obtain the fluctuating number of interface traps in the cell.…”

Section: The Modeling Frameworkmentioning

confidence: 99%

“…As for hot-carrier degradation (HCD), which has been repeatedly declared to be the most detrimental reliability concern in ultra-scaled FETs [ 13 , 14 ], although HC induced variability was a subject of experimental [ 15 , 16 , 17 , 18 , 19 , 20 , 21 ] and modeling [ 22 , 23 , 24 , 25 , 26 , 27 , 28 ] studies, to the best of our knowledge there is a limited number of publications devoted to correlation between time-0 and HC stress induced transistor parameter distributions [ 29 , 30 , 31 ], and no simulation studies of this correlation have been performed so far. Schlünder et al [ 29 ] reported a strong correlation between parameters in the

and

tuples (here t is the stress time, while

is the drain current).…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we perform the first theoretical study of the correlation between time-0 values of the linear and saturation drain currents (

and

, respectively) in n-channel FinFETs and relative drain current changes (

and

) induced by HC stress. For this we employ our approach to stochastic HCD modeling [ 23 , 25 , 26 ]. We consider the roles of impacts of random dopants and random traps on this correlation.…”

Section: Introductionmentioning

confidence: 99%

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Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

et al. 2020

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We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (RDs) on HCD. For this analysis we generate a set of 200 device instantiations where each of them has its own unique configuration of RDs. For all “samples” in this ensemble we calculate time-0 currents (i.e., currents in undamaged FinFETs) and then degradation characteristics such as changes in the linear drain current and device lifetimes. The robust correlation analysis allows us to identify correlation between transistor lifetimes and drain currents in unstressed devices, which implies that FinFETs with initially higher currents degrade faster, i.e., have more prominent linear drain current changes and shorter lifetimes. Another important result is that although at stress conditions the distribution of drain currents becomes wider with stress time, in the operating regime drain current variability diminishes. Finally, we show that if random traps are also taken into account, all the obtained trends remain the same.

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Section: Resultssupporting

confidence: 53%

“…Nevertheless, Figure 11 shows that

and

dependencies obtained considering impacts of both RDs and RTs show the same trends as those curves generated taking only RDs into account. Note that the impact of RTs results in broadening of

distributions, see [ 24 , 26 ], but this trend is a natural consequence to the fact that inclusion of RTs into our modeling approach adds an additional source of variability.…”

Section: Resultsmentioning

confidence: 99%

“…The obtained continuous

densities were also a subject for discretization/randomization [ 24 , 26 ]. In a similar manner as in the case of RDs we multiplied the local

Section: The Modeling Frameworkmentioning

confidence: 99%

and

tuples (here t is the stress time, while

is the drain current).…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we perform the first theoretical study of the correlation between time-0 values of the linear and saturation drain currents (

and

, respectively) in n-channel FinFETs and relative drain current changes (

and

) induced by HC stress. For this we employ our approach to stochastic HCD modeling [ 23 , 25 , 26 ]. We consider the roles of impacts of random dopants and random traps on this correlation.…”

Section: Introductionmentioning

confidence: 99%

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