As a conjugated and unsymmetric building block composed of an electron-poor seven-membered sp 2 carbon ring and an electron-rich five-membered carbon ring, azulene and its derivatives have been recognized as one of the most promising building blocks for novel electronic devices due to its intrinsic redox activity. By using 1,3,5-tris(4-aminophenyl)-benzene and azulene-1,3-dicarbaldehyde as the starting materials, an azulene(Azu)-based 2D conjugated covalent organic framework, COF-Azu, is prepared through liquid-liquid interface polymerization strategy for the first time. The as-fabricated Al/COF-Azu/indium tin oxide (ITO) memristor shows typical non-volatile resistive switching performance due to the electric filed induced intramolecular charge transfer effect. Associated with the unique memristive performance, a simple convolutional neural network is built for image recognition. After 8 epochs of training, image recognition accuracy of 80 % for a neutral network trained on a larger data set is achieved.Ultrathin and uniform two-dimensional (2D) conjugated covalent organic frameworks (COFs) exhibit great application potential in e.g. optoelectronics, catalysis, drug delivery, sensors, energy storage, membrane separation and photonics due to their favorable intrinsic carrier mobility, tunable layered porous structures and functions. [1][2][3][4][5][6][7][8][9] The common linkers used for constructing 2D COFs are mainly the C=C, CÀ N, C=N, BÀ O and B=N bonds. However, it's still a
Summary
Polymer memristors are preeminent candidates for low-power edge computing paradigms. Poly[chalcogenoviologen-
alt
-triphenylamine] (PCVTPA) has been synthesized by direct coupling of chalcogeno-viologen as electron acceptor and 4-(bromomethyl)-N-(4-(bromo-methyl)phenyl)-N-phenylaniline as electron donor. The introduction of chalcogen atoms (S, Se, Te) into viologen scaffolds can greatly improve electrical conductive, electrochemical, and electrochromic properties of the materials when compared with the conventional viologens. Taking PTeVTPA as an example, the as-fabricated electronic device with a configuration of Al/PTeVTPA/ITO exhibits excellent multilevel storage and history-dependent memristive switching performance. Associated with the unique memristive behavior, the PTeVTPA-based device can not only be used to emulate the synaptic potentiation/depression, the human's learning and memorizing functions, and the transition from short-term synaptic plasticity to long-term plasticity but also carry out decimal arithmetic operations as well. This work will be expected to offer a train of new thought for constructing high-performance synaptic biomimicking and neuromorphic computing system in the near future.
The as-fabricated Al/BP–PAN/ITO device exhibits excellent nonvolatile rewritable memory performance, with a high ON/OFF current ratio exceeding 104 and a small switch-on voltage of −1.45 V.
The as‐prepared BPDQs:Y6:PVP blends, in which Y6 acts as nonfullerene acceptor, black phosphorus quantum dots (BPQDs) serve as donor, and polyvinylpyrrolidone (PVP) as a polymer matrix, can respond to both the electrical and optical stimuli. Using these blends as the active layer, the first bulk heterojunction device with the functions of organic photovoltaics and information storage, Al/BPQDs:Y6:PVP/indium tin oxide, is fabricated. When the applied voltages vary from 0 to −0.8 V, this device exhibits both the photoinduced resistive state changes and volatile photoresponse characteristic in the broadband visible region. The light illumination gives rise to the significantly decrease of the device resistance. Furthermore, it is also found that, when the applied voltages are changed from 0 to ± 3 V, this device shows a typical nonvolatile rewritable memory performance in the dark, with an ON/OFF current ratio of 8 × 103, a switching‐on voltage of −1.68 V, and a smaller switching bias window. Upon illumination with different wavelength light, both the switching‐on voltage and the ON/OFF current ratio of the device are found to be greatly decreased. This work can be expected to open a way to the integration of information storage, modulating and demodulating functions, photovoltaic effect, and photoelectric detection in an optoelectronic device.
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