In-situ growing D-A polymer from the surface of reduced graphene oxide: Synthesis and nonvolatile ternary memory effect

Li, Dongqi; Zhang, Bin; Zhu, Congcong; Tian, Xiangyu; Zhizheng, Zhao; Chen, Yu

doi:10.1016/j.carbon.2018.11.083

Cited by 14 publications

(12 citation statements)

References 25 publications

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“…However, as illustrated in Figure 4, Al/GO/Al RRAM devices with no ∆ф M exhibit enhanced RS performance. Compared with metals like Au, Ag, and Cu, local oxidation is more likely to occur on Al electrodes at the interface, which might be a decisive influence factor explaining its unique performance [120][121][122][123][124][131][132][133]. As reported by Liu et al [8], the work function difference between TE and BE metals has significant effects on device characteristics and performance.…”

Section: Rram Based On Graphene and Its Derivativesmentioning

confidence: 92%

“…The ф M of Pt is~5.65 eV, while the ф M of Au, Ti, Ag, and Cu is~5.1 eV,~4.33 eV,~4.26 eV, and~4.65 eV, respectively. The existence of a work function difference (∆ф M ) between TE and BE, namely, an asymmetric work function between active and inert electrode, results in the appearance of RS performance in these GO-based RRAM devices [120][121][122][123][124]131,132]. For GO-based devices with ITO (indium tin oxide) as the BE, the ф M of ITO is~4.9 eV, which is very close to the ф M of metal Au.…”

Section: Rram Based On Graphene and Its Derivativesmentioning

confidence: 97%

“…Table 4 exhibits various TE and BE combinations of GO-based RRAM devices. It is suggested that the RS performance of GO-based RRAM devices is mainly related to the different work functions (ф M ) of TE and BE [120,121,131]. In Table 4, Au, Al, Ag, Cu, and Ti are always used as the TE while Pt is commonly used as the BE in electronic devices.…”

Section: Rram Based On Graphene and Its Derivativesmentioning

confidence: 99%

“…In general, the RS behavior and switching mechanism are influenced by the fabrication methods and hybridization state of graphene-based material dielectric layers, the deposition techniques of electrode layers, and the choice of TE and BE materials. Some studies agreed that the structure modification of the entire dielectric layer results in a comprehensive effect on RS behavior [123,131,140]. However, other studies considered that the RS behavior is a regional phenomenon, as…”

Section: Oxygen Ion-based Switching Mechanismmentioning

confidence: 99%

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Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Section: Rram Based On Graphene and Its Derivativesmentioning

confidence: 92%

Section: Rram Based On Graphene and Its Derivativesmentioning

confidence: 97%

Section: Rram Based On Graphene and Its Derivativesmentioning

confidence: 99%

Section: Oxygen Ion-based Switching Mechanismmentioning

confidence: 99%

See 2 more Smart Citations

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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“…In order to improve the data storage capacity of a computer, one kind of strategy is downscaling single storage unit to improve the data storage density, which is however restricted by the limitations of physical factors and the complicated synthetic process. , Recently, designing and developing multilevel electronic storage devices based on molecular characteristics has shown great potential in improving the data storage capacity. Particularly, the RRAM with ternary electrical storage characteristic could increase the storage density to 3 n , which is hundreds of millions of times larger than that of binary systems (2 n ). − Liu and his colleagues prepared a ternary RRAM from a nonconjugated polymer with an on-chain Ir(III) complexes. Subsequently, Chan et al achieved the change of polymer’s memory behavior by a simple modification in the position of the substituent on the SubPc core.…”

Section: Introductionmentioning

confidence: 99%

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Zhang¹,

Zhao²,

Bai³

et al. 2019

Macromolecules

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Functional polymers show great potential in information storage applications. However, most of these polymer-based memory devices demonstrate limited capacity because of binary memory characteristic. Herein, three novel donor−acceptor-type bipolar conjugated copolymers containing the naphthalene benzimidazole unit as the acceptor and fluorene/carbazol as the donor were synthesized by Suzuki cross-coupling reaction. When applied in memory devices, these as-prepared polymers exhibit unique ternary resistance switch memory behaviors with high switching current ratios of 1

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Modified Donor End Caps for Binary‐to‐Ternary WORM Memory Conversion in N‐Heteroaromatic Systems

Gayathri,

Akshaya,

Imran

et al. 2024

ChemPhysChem

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A series of novel A‐π‐D type organic small molecules have been designed, synthesized, and demonstrated for non‐volatile resistive switching WORM memory application. The electron‐deficient phenazine and quinoxaline units were coupled with various functionalized triphenylamine end caps to explore the structure‐property correlations. The photophysical investigations displayed considerable intramolecular charge transfer, and the electrochemical analysis revealed an optimum band gap of 2.44 to 2.83 eV. These factors and the thin film morphological studies suggest the feasibility of the compounds as better resistive memory devices. All the compounds indicated potent non‐volatile resistive switching memory capabilities with ON/OFF ratios ranging from 103 to 104, and the lowest threshold voltage recorded stands at ‐0.74 V. A longer retention time of 103 s marks the substantial stability of the devices. The phenazine‐based compounds outperformed the others in terms of memory performance. Exceptionally, the compound with –CHO substituted triphenylamine exhibited ternary memory performance owing to its multiple traps. The resistive switching mechanism for the devices was validated using density functional theory calculations, which revealed that the integrated effect of charge transfer and charge trapping contributes significantly to the resistive switching phenomena.

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In-situ growing D-A polymer from the surface of reduced graphene oxide: Synthesis and nonvolatile ternary memory effect

Cited by 14 publications

References 25 publications

Memristive Non-Volatile Memory Based on Graphene Materials

Memristive Non-Volatile Memory Based on Graphene Materials

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Modified Donor End Caps for Binary‐to‐Ternary WORM Memory Conversion in N‐Heteroaromatic Systems

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