A GeTe reconfigurable phase change switch for radio frequency applications is presented. Low ON state resistance (180 Ω) and large dynamic range (7×103 X) were achieved through low resistance electrode design and high current. A partial crystallization and partial reamorphization model is proposed to explain the differences between the measured and calculated device ON (set) and OFF (reset) state resistances, respectively. The dependency between ON state resistance and reset current was estimated using a first order thermal design in steady state which suggests lower reset current by choosing materials of lower melting temperature and structures with better thermal isolation.
Band alignment of amorphous Ge2Sb2Te5 and various substrates was obtained using high-resolution x-ray photoelectron spectroscopy. The valence band offset of Ge2Sb2Te5 on various complementary-metal-oxide-semiconductor (CMOS) materials, i.e., Si, SiO2, HfO2, Si3N4 and NiSi, were investigated with the aid of the core level, valence band, and energy loss spectra. Energy band lineups of Ge2Sb2Te5 on these materials were thus determined which can be used as for phase change memory device engineering and integration with CMOS technology.
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