Impacts of metal interlayer on Negative Capacitance Transistors

Analytical modeling of architecture dependent atypical scaling trends in metal–Hf0.5Zr0.5O2–metal-SiO2–Si negative capacitance transistors

“…The above reasons, reported in the literature [11,[16][17][18][19][20], motivate us to investigate the MFMIS structure over MFIS topology. Apart from the above-mentioned advantages, MFMIS can also exhibit disadvantages (over MFIS NCFET) such as (i) stabilization of the NC can be affected by a leaky FE layer [21].…”

“…In this work, the MFMIS architecture (figures 1(a) and (b)) is considered due to its superiority over the metal-FEinsulator-semiconductor (MFIS) structure in the subthreshold region [11,[16][17][18][19][20]. A few advantages of the MFMIS architecture over the MFIS structure reported in the literature [11,[16][17][18][19][20] are listed below.…”

“…(c) An enhanced parasitic capacitance in the MFMIS NCFET supports capacitance matching between the C FE and C MOS , which results in an improved subthreshold swing compared to the MFIS NCFET [11]. (d) The MFMIS structure shows a higher on-current as compared to the MFIS device because of uniform FE polarization, which provides a uniform IVA along the channel [16,18]. (e) The MFMIS NCFET exhibits hysteresis at higher T FE values in comparison to the MFIS structure, which makes the MFMIS architecture preferable for hysteresis-free logic applications [17].…”

Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic design

“…In this work, MFMIS NCFET [21,[33][34][35][36][37][38][39][40][41] has been preferred because of its several advantages over the MFIS NCFET such as (a) The presence of an internal metal gate raises the energy barrier of the entire channel region in the MFMIS NCFET which effectively enhances the threshold voltage [23]. Also, the outer fringing parasitic capacitance is enhanced which contributes towards improving DIBL and threshold voltages at lower gate lengths [23], (b) The current drive of MFMIS is expected to be higher than that of MFIS because of the uniform ferroelectric polarization which leads to uniform amplification voltage along the channel direction [42,43], (c) MFMIS NCFET is less prone to hysteresis, and starts…”