Metal−semiconductor−metal UV photodetectors consisting of transferable zinc-tin-oxide (ZTO) microsphere (MS) monolayers with different phases and sizes are reported. From the experimental results, the crystallized Zn 2 SnO 4 (c-ZTO)-MS-monolayer-based photodetectors present higher performance than amorphous ZnSnO 3 (a-ZTO)-based photodetectors. The external quantum efficiencies of the a-ZTO-and c-ZTO-MS-based UV photodetectors are 16.7% (at 320 nm) and 580.9% (at 310 nm), respectively. Moreover, the UV-to-visible rejection ratios of the a-ZTO and c-ZTO are 20 (320 nm/400 nm) and 1484 (310 nm/400 nm), respectively, indicating that both fabricated ZTO MS UV photodetectors present great visible-blind properties. To further improve the optoelectronic device performance, the c-ZTO-MSbased UV photodetector is optimized using various sphere diameters, namely, 0.79, 0.99, 1.24, and 1.51 μm. The best photodetecting properties are obtained for the 1.24 μm c-ZTO MS detector, showing a 51.1-fold improvement in photocurrent compared with the lowest level c-ZTO-based detector. These results are attributed to the different oxygen-related defect ratios in the ZTO MSs. The reported transferable ZTO-MS-monolayer-based optoelectronic devices have the potential for novel optoelectronic applications.

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