2022
DOI: 10.1016/j.jallcom.2022.167329
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Enhanced device performance of Cs2AgBiBr6 double perovskite photodetector by SnO2/ZnO double electron transport layer

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Cited by 19 publications
(10 citation statements)
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“…The exciton peak at around 340 nm originated from the band-edge absorption and it was proved that the intensity of this specific peak could be enhanced by the increase in bismuth doping concentration. 39 The estimated ratio of peak intensities was about 3.9, which was close to the precursor ratio but did not match the dopant concentration estimated by STEM-EDS. This could be due to the limited area of elemental analysis under microscopic observation.…”
Section: Resultsmentioning
confidence: 61%
See 2 more Smart Citations
“…The exciton peak at around 340 nm originated from the band-edge absorption and it was proved that the intensity of this specific peak could be enhanced by the increase in bismuth doping concentration. 39 The estimated ratio of peak intensities was about 3.9, which was close to the precursor ratio but did not match the dopant concentration estimated by STEM-EDS. This could be due to the limited area of elemental analysis under microscopic observation.…”
Section: Resultsmentioning
confidence: 61%
“…The sharp absorption peak accounts for the effective absorption of photons, which is responsible for the capture of large photocurrents of the photodetectors based on 3%-doped NCs and 6%-doped NCs. The exciton peak at around 340 nm originated from the band-edge absorption and it was proved that the intensity of this specific peak could be enhanced by the increase in bismuth doping concentration . The estimated ratio of peak intensities was about 3.9, which was close to the precursor ratio but did not match the dopant concentration estimated by STEM-EDS.…”
Section: Resultsmentioning
confidence: 80%
See 1 more Smart Citation
“…We believe that vacuum deposition of Au electrodes on the Cs 2 AgBiBr 6 DP thin film may improve the I ON / I OFF ratio. Nevertheless, our device exhibited fast rise and fall times of ∼170 and ∼177 μs, respectively (see Figure d), which is almost 3 orders of magnitude faster than the solution-processed Cs 2 AgBiBr 6 DP thin film photodetector . Our device also showed photoresponse at 0 V bias (Figure S18, Supporting Information), thus behaving as a self-powered device with significant photocurrent without any electron/hole transport layers, which authenticates our CVD method to grow a high-quality thin film of Cs 2 AgBiBr 6 DP for practical optoelectronic device applications.…”
Section: Application As a Photodetectormentioning
confidence: 99%
“…The use of perovskite materials to improve the performance of photodetectors has been intensively studied recently. High performance perovskite-containing photosensitive elements operating in the mode of photodiodes, phototransitors and photoresistors have been demonstrated [ 36 , 37 , 38 , 39 ]. There is also an increasing number of studies considering photoconductive perovskite-containing materials as elements of artificial synapses [ 40 , 41 , 42 , 43 , 44 ].…”
Section: Introductionmentioning
confidence: 99%