High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated polymer wrapping. However, further purification of sorted s-SWNTs and high costs of raw materials are still challenges to practical applications. It is inevitable that a lot of polymers still cover the surface of s-SWNTs after separation, and the cost of the polymer is relatively higher than that of SWNTs. Here, we demonstrated a facile isolated process to improve the quality of s-SWNT solutions and films significantly. Compared with the untreated s-SWNTs, the contact resistance between the s-SWNT and the electrode is reduced by 20 times, and the thin-film transistors show 300% enhancement of current density. In this process, most of the polymers can be recycled and reused directly without any purification, which can greatly decrease the cost for s-SWNT separation. The results presented herein demonstrate a new scalable and low-cost approach for large-scale application of s-SWNTs in the electronics industry.
High-resolution electron energy loss spectroscopy has been used to investigate the effect of atomic hydrogen and oxygen on diamond growth. For a totally desorbed diamond (100) surface, atomic hydrogen corrodes carbon atoms on the surface tirst, then saturates the dangling bonds of sp3 hybridized carbon atoms on the next layer of diamond surface. But for the monohydrogenated dimerized surface, atomic hydrogen opens the elongated surface C-C dimer bonds. Oxygen abstracts adsorbed hydrogen at low substrate temperature, and makes all of the adsorbed hydrogen become abstracted if the reaction time is long enough. But this desorbed surface differs. from that by heating to 1300 "C!. For diamond ( 111) facets, atomic deuterium first abstracts the hydrogen atoms. adsorbed on ( 111) faces, and then replaces the hydrogen atoms adsorbed on { 110) steps.
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