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Layered antiferromagnetism is the spatial arrangement of ferromagnetic layers with antiferromagnetic interlayer coupling. Recently, the van der Waals magnet, chromium triiodide (CrI 3 ), emerged as the first layered antiferromagnetic insulator in its few-layer form 1 , opening up ample opportunities for novel device functionalities 2-7 . Here, we discovered an emergent nonreciprocal second order nonlinear optical effect in bilayer CrI 3 . The observed second harmonic generation (SHG) is giant: several orders of magnitude larger than known magnetization induced SHG 8-11 and comparable to SHG in the best 2D nonlinear optical materials studied so far 12-15 (e.g. MoS 2 ). We showed that while the parent lattice of bilayer CrI 3 is centrosymmetric and thus does not contribute to the SHG signal, the observed nonreciprocal SHG originates purely from the layered antiferromagnetic order, which breaks both spatial inversion and time reversal symmetries. Furthermore, polarization-resolved measurements revealed the underlying C 2h symmetry, and thus monoclinic stacking order in CrI 3 bilayers, providing crucial structural information for the microscopic origin of layered antiferromagnetism 16-20 . Our results highlight SHG as a highly sensitive probe that can reveal subtle magnetic order and open novel nonlinear and nonreciprocal optical device possibilities based on 2D magnets.

Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. Unique to two-dimensional (2D) van der Waals materials, the control can be achieved by modifying the stacking order through rotation and translation between the layers. Here, we report the first observation of stacking dependent interlayer magnetism in the 2D magnetic semiconductor, chromium tribromide (CrBr 3 ), enabled by the successful growth of its monolayer and bilayer through molecular beam epitaxy. Using in situ spin-polarized scanning tunneling microscopy and spectroscopy, we directly correlated the atomic lattice structure with observed magnetic order. We demonstrated that while individual CrBr 3 monolayer is ferromagnetic, the interlayer coupling in bilayer depends strongly on the stacking order and can be either ferromagnetic or antiferromagnetic. Our observations provide direct experimental evidence for exploring the stacking dependent layered magnetism, and pave the way for manipulating 2D magnetism with unique layer twist angle control.

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with Tc ∼ 46.6 K for the optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier doping in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions. PACS numbers: 74.25.F-, 74.70. Xa, Chemical doping is a conventional way to introduce charge carriers into solids by replacing one of the constituent elements with another element of a different valence state. For instance, high temperature superconductivity is realized by suppressing the antiferromagnetism or spin density wave with chemical doping of 10% or 10 21 dopant atoms per cm 3 in copper oxides and iron-based superconductors [1-3]. However, the chemical doping is incapable in many cases, because the element replacement and the variation of carrier density cannot practically cover a large regime and leave many phases unexplored. As a complementary method, the application of field effect transistors (FET) in two-dimensional systems is an effective way to control electronic properties via reversible changes of charge carrier density [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Such an electrostatic doping is desirable to study novel phases that cannot be achieved by material synthetic methods [7, 9-11, 13, 15, 16, 18]. For instance, we have utilized tunable ion intercalation with an ionic liquid to alter charge-ordered states in 1T-TaS 2 and induce phase transitions in thin flakes with reduced dimensionality [15]. The FET devices have been widely applied in the exploration of new superconductors [10,11], the preparation for new devices [19,20] as well as many applications in semiconductor industry [7].So far, only two types of field effect transistor (FET) devices, metal-insulator-semiconductor (MIS) FET ( Fig.

Organic-inorganic halide perovskite semiconductors are ideal gain media for fabricating laser and photonic devices due to high absorption, photoluminescence (PL) efficiency and low nonradiative recombination losses. Herein, organic-inorganic halide perovskite CH3NH3PbI3 is embedded in the Fabry-Perot (FP) microcavity, and a wavelength-tunable excitonic lasing with a threshold of 12.9 μJ cm-2 and the spectral coherence of 0.76 nm are realized. The lasing threshold decreases and the spectral coherence enhances as the temperature decreases; these results are ascribed to the suppression of exciton irradiative recombination caused by thermal fluctuation. Moreover, both lasing and light emission below threshold from the perovskite microcavity (PM) system demonstrate a redshift with the decreasing temperature. These results provide a feasible platform based on the PM system for the study of light-matter interaction for quantum optics and the development of optoelectronic devices such as polariton lasers.

How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric.By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped superconducting region with optimal Tc ~ 43 K, which is separated by a quantum critical point from ferromagnetically insulating phase. The ferromagnetism arises from the long range order of the interstitial Fe ions expelled from the (Li,Fe)OH layers by Li injection. The device can reversibly manipulate collectively ordered electronic states and stabilize new metastable structures by electric field.

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Exploration of new superconductors has always been one of the research directions in condensed matter physics. We report here a new layered heterostructure of [(Fe,Al)(OH)2][FeSe]1.2, which is synthesized by the hydrothermal ion-exchange technique. The structure is suggested by a combination of X-ray powder diffraction and the electron diffraction (ED).[(Fe,Al)(OH)2][FeSe]1.2 is composed of the alternating stacking of tetragonal FeSe layer and hexagonal (Fe,Al)(OH)2 layer. In [(Fe,Al)(OH)2][FeSe]1.2, there exists mismatch between the FeSe sub-layer and (Fe,Al)(OH)2 sub-layer, and the lattice of the layered heterostructure is quasi-commensurate. The as-synthesized [(Fe,Al)(OH)2][FeSe]1.2 is non-superconducting due to the Fe vacancies in the FeSe layer. The superconductivity with a Tc of 40 K can be achieved after a lithiation process, which is due to the elimination of the Fe vacancies in the FeSe layer. The Tc is nearly the same as that of (Li,Fe)OHFeSe although the structure of [(Fe,Al)(OH)2][FeSe]1.2 is quite different from that of (Li,Fe)OHFeSe. The new layered heterostructure of [(Fe,Al)(OH)2][FeSe]1.2 contains an iron selenium tetragonal lattice interleaved with a hexagonal metal hydroxide lattice. These results indicate that the superconductivity is very robust for FeSe-based superconductors. It opens a path for exploring superconductivity in iron-base superconductors.