a b s t r a c tFocused electron beam induced etching (FEBIE) with chlorine as etching agent has been used to geometrically shape and to electrically modify semiconductor nanodevices. Selected sections of monocrystalline nanowires were modified directly without the requirement for a photomask or a resist layer. FEBIE as a subtractive nanofabrication technology allows to locally etch active semiconductor devices made of Si or Ge. In this work, chlorine is used as the etchant gas to thin germanium channel structures fabricated by standard photolithography. For effective material removal a sufficiently high electron influence is essential to avoid the pitfalls of this method. Topography and conductivity of FEBIE-modified structures prior and after the etching process was studied by AFM and by electrical I-V characteristics. The presented work demonstrates the potential of Cl-based FEBIE for device prototyping and electrical trimming of future Ge-based nanodevices.

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