Metamaterials have surprisingly broadened the range of available practical applications in new devices such as shielding, microwave absorbing, and novel antennas. More research has been conducted related to tuning DNG frequency bands of ordered or disordered metamaterials, and far less research has focused on the importance of impedance matching behavior, with little effort and attention given to adjusting the magnitude of negative permittivity values. This is particularly important if devices deal with low-amplitude signals such as radio or TV antennas. The carbon/hafnium nickel oxide (C/HfNiO) nanocomposites with simultaneously negative permittivity and negative permeability, excellent metamaterial performance, and good impedance matching could become an efficient alternative for the ordered metamaterials in wave-transparent, microwave absorbing, and solar energy harvesting fields. In this study, we prepared C/HfNiO nanocomposites by the solvothermal method, and we clarified how the impedance matching and double-negative (DNG) behaviors of C/HfNiO can be tuned by an external AC electric field created by an electric quadrupole system. An external electric field allows for the alignment of the well-dispersed nanoparticles of carbon with long-range orientations order. We believe that this finding broadens our understanding of moderate conductive material-based random metamaterials (MCMRMs) and provides a novel strategy for replacing high-loss ordered or disordered metamaterials with MCMRMs.
Issues such as Tunneling, Leakage Currents and Light-Atom Penetration through the Film Are Threatening the Viability of Ultra-Thin Sio2as a Good Dielectric for Industrial and Electronic Devices and in Ceramic Technologies. in this Paper, the Effect of Zirconium-Doped Lanthanum Oxide Is Investigated in the Hope that this Material Can Be Used as a Good Gate Dielectric for the next Generation of CMOS (Complementary-Metal-Oxide-Semiconductor). Zirconium Lanthanum Oxide Nanocrystallites with General Formula of Zrxla1-xOyWere Prepared by Using the Sol-Gel Method, such that the Zr Atomic Fractions in the Material Were in the Range of X = 5%, 20% and 50%. the Nanocrystallite’s Phases and Properties Were Characterized Using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) Techniques. Electrical Property Characterization Was Also Performed Using the Cyclic-Voltameter (C-V) Technique in TRIS Solution (pH = 7.3). C-V Measurements Show that Current through the TRIS Reduces at Higher Temperatures. Moreover, Elemental Qualitative Analysis Was Performed via Energy Dispersive X-Ray (EDX) Spectroscopy and Confirmed the above Claims.
In the present study, Ta/La 2 O 3¯l ms (La 2 O 3 doped with Ta 2 O 5 Þ as a gate dielectric were prepared using a sol-gel method at low pressure. Ta/La 2 O 3¯l m has some hopeful properties as a gate dielectric of logic device. The structure and morphology of Ta/La 2 O 3¯l ms were studied using X-ray di®raction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrical properties of¯lms were performed using capacitance-voltage (C-V Þ and current density-voltage (J-V Þ measurements. The optical bandgap of samples was studied by UV-visible optical absorbance measurement. The optical bandgap, E opt , is determined from the absorbance spectra. The obtained results show that Ta/La 2 O 3¯l m as a good gate dielectric has amorphous structure, good thermal stability, high dielectric constant ð% 25Þ, low leakage current and wide bandgap ð% 4:7 eVÞ.
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