Electrical Properties of Zr-Doped La₂O₃ Nanocrystallites as a Good Gate Dielectric

Abstract

Issues such as Tunneling, Leakage Currents and Light-Atom Penetration through the Film Are Threatening the Viability of Ultra-Thin Sio2as a Good Dielectric for Industrial and Electronic Devices and in Ceramic Technologies. in this Paper, the Effect of Zirconium-Doped Lanthanum Oxide Is Investigated in the Hope that this Material Can Be Used as a Good Gate Dielectric for the next Generation of CMOS (Complementary-Metal-Oxide-Semiconductor). Zirconium Lanthanum Oxide Nanocrystallites with General Formula of Zrxla1-xOyWere Prepared by Using the Sol-Gel Method, such that the Zr Atomic Fractions in the Material Were in the Range of X = 5%, 20% and 50%. the Nanocrystallite’s Phases and Properties Were Characterized Using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) Techniques. Electrical Property Characterization Was Also Performed Using the Cyclic-Voltameter (C-V) Technique in TRIS Solution (pH = 7.3). C-V Measurements Show that Current through the TRIS Reduces at Higher Temperatures. Moreover, Elemental Qualitative Analysis Was Performed via Energy Dispersive X-Ray (EDX) Spectroscopy and Confirmed the above Claims.

A Novel Gate Dielectric with ZrxLa1−xOyMaterial for the Future of Nano Transistor Devices

“…The barrier height at a Si/SiO 2 is ∼3.5 eV. However, the barrier heights and the band gaps of high-k materials in contact with silicon tend to decrease with increasing dielectric constant [10,20]. Some of the promising high-k materials, such as Ta 2 O 5 and BaTiO 3 , have calculated barrier heights 0.5 eV.…”