Chalcogenide-based In2Se3 thin films were deposited by RF magnetron sputtering method at room temperature, and then were annealed at different temperature under nitrogen atmosphere in order to study the effect of annealing temperature on structure and optical. X-ray diffraction analysis show that, the preferred orientation in (110), (006), and (207) plane were observed in XRD result of the film sample annealed at 400℃. The Raman spectrometer result reveals that the main Raman peaks were identified as the γ-phase In2Se3 structure and the peak in the film annealed at 400℃ moves to small direction indicates the inner structure changes occurrence. A Spectroscopic Ellipsometer was employed to measure the optical constants including refractive index and the extinction coefficient of the films. The optical bandgap decreased from 3.41 eV to 2.45 eV with the annealed temperature increasing. The variation is attributed to the Burstein-Moss effect.
BaCO3, ZrO2, TiO2 and Fe2O3, were used as the starting materials, the BaZr0.1Fe0.02Ti0.88O3 powders are prepared using solid state synthesis method, the powders were coated with SiO2, the influence of different SiO2 package on the structure, micro morphology and dielectric properties of the samples is studied. The results show that all the samples have typical diffraction peaks of perovskite crystal; however, with the increase of the amount of inclusion of SiO2, a part of SiO2 enters into the crystal lattice, forming the BaTiSi4O11 phase in the body. The grain size of the sample coated with SiO2 is significantly larger than that of the sample not coated, with the continuous increase of the amount of coating, the grain size has no obvious change, and the size distribution is relatively uneven. With the increase of SiO2 content, the dielectric constant of the sample increases first and then decreases, and the dielectric loss of the sample decreases first and then increases. Due to the coating of SiO2, the dielectric constant is 2736, and the dielectric loss is 0.033 when the content of SiO2 is 1 wt%.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.