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In this study, plasma modification was carried out in barrier discharge under atmospheric pressure. Sulfur dioxide and/or sodium oxide was used as the coating precursor. The results show that the films treated with a mixture of argon and sulfur dioxide inhibited microbial growth considerably better than those with coatings containing argon and sodium oxide. The highest levels of growth inhibition, of 86% for Staphylococcus aureus and 82% for Escherichia coli, were achieved with films carrying a sulfur‐containing coating (1.4% SO2). Copyright © 2014 John Wiley & Sons, Ltd.

Results of nanomechanical studies of ultrathin silicon dioxide and silicon nitride films are discussed. Films applicable to MEMS technology were manufactured on single-crystal silicon wafer's at atmospheric perssure by the glow discharge technique.