on the occasion of his 75th birthdayThe temperature dependence of the conductivity of crystalline pyrargyrite and the diffusion coefficient of 11OmAg atoms in this crystal is studied in the temperature interval between 300 to 700 K. The correlation of the activation energy determined from the conductivity and the diffusion data and agreement between the diffusion coefficients measured experimentally and calculated from the Nernst-Einstein relation approve the assumption that the high-temperature conductivity in single crystals of Ag,SbS, is due to Ag+ ion migration. #y3m paaHoamuBHoro A~O T O~~ cepe6pa 110 mAg B KpmTaaaax mpaprnpma B 063aCTki ~CCJlenOBaHa TeMllepaTypHafi 3aBMCMMOCTb 3JleKTpOnpOBOnHOCTM M K03@@4MeHTa n M @ -300 A0 700 I<. Ha OCHOBPHMU COBIIaneHUff 3HeprllH aICTMBa4UU IIpOBOnHMOCTK G i nM4-@YBAA, a TaKXW M3MepeHHOrO K03@@IIUMeHTa AII@I&DHH Pi paCCWiTaHHOrO 113 COOTHO-IIIeHMH HepHCTa-3BHIIITeaHa XWIaeTCH BbIBOA 0 TOM, 9 T O B~,ICOHOTeMnepaTypHafi np0-BOUHMOCTb KpMCTaJIJlOB Ag,SbS, 06yCJIOBJIeHa UOHaMM cepe6pa.
The effect of pressure on light and heavy hole masses in GaAs is studied. A theoretical calculation of the dependence of the hole masses on pressure is carried out taking into account the influence of the lowest conduction band levels I ? : andThe experimental values are obtained from the change of the tunnel diode characteristics with pressure. The agreement of the calculated values with the experimental data is good for the light holes.Der EinfluB des Druckes auf die effektiven Massen der leichten und schweren Locher in GaAs wird untersucht. Eine theoretische Berechnung der Abhlingigkeit der Uchermasse vom Druck wird unter Beriicksichtigung des Einflusses der tiefsten Leitungsband-Niveaus I?: and l?f6 durchgefiihrt. Experimentelle Werte werden aus den Veriinderungen der Tunneldioden-Kennlinien mit dem Druck erhalten. Cute Obereinstimmung der berechneten mit experimentellen Werten wird fiir die leichten Locher gefunden.
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