No abstract

A novel high concentration linear variable doping interface thin silicon layer (TSL) silicon-on-insulator (SOI) super junction (SJ) LDMOS is proposed. The design of the linear variable doping can deplete the high drift concentration. The proposed structure uses a TSL to achieve charge balance and eliminate substrate-assisted depletion effect. The dielectric electric field (E I ) and the breakdown voltage (BV) of the TSL SOI SJ are 530 V/mm and 552 V with 30 mm length drift region and 1 mm-thick dielectric layer, respectively, and the specific on-resistance (R on, sp ) is 0.03403 V . cm 2 and FOM (FOM ¼ BV 2 /R on,sp ) is 8.95 MW/cm 2 , when gate voltage is 5 V.Introduction: The SOI SJ can improve the trade-off characteristic between BV and R on,sp in a power device. But the substrate-assisted depletion (SAD) effect of SOI SJ upsets the delicate charge balance (CB) between the N and P pillars of the SOI SJ, which is the charge interaction between the SJ region and the substrate in the off-state. The charge imbalance between the pillars leads to the drop of BV in the SJ device, especially at high doping levels [1]. Since enhancing the dielectric electric field is a feasible way to increase the BV, so several new structures have been proposed by using the enhanced dielectric layer field (ENDIF) principle, in which introducing interface charges is effective and attractive [2,3]. Based on the theoretical and experimental investigations of TSL SOI [4-9], a novel SOI SJ with an interface thin silicon layer is proposed in this Letter, which provides a higher BV than the conventional SOI SJ. The influences of structure parameters on BV are analysed by ISE [10] and special on-resistance (R on,sp ) is studied.

No abstract

No abstract