In this letter, we report on the direct synthesis of C54 TiSi2 films with fine grains by pulsed-laser irradiation from Ti deposited on Si substrates, using a Q-switched Nd:YAG laser. The films were characterized using micro-Raman spectroscopy, high-resolution transmission electron microscopy, and atomic force microscopy. In comparison with the C54 TiSi2 using the conventional rapid thermal annealing (RTA) of 35 nm thick Ti/Si, which has an average grain size of about 110 nm and film thickness of 50 nm, the laser-induced C54 TiSi2 films vary from 13 to about 42 nm in thickness with different laser scanning speed and the grain size is 85 nm on average. The TiSi2/substrate Si interface is smooth on the atomic scale. Our results demonstrate the unique advantages of the laser-induced formation technique and its potential in deep submicron semiconductor technology. We propose that the C54 phase is formed by solid-state diffusion, rather than melting.
In this article, we report on the laser‐induced formation of both C49 and C54 TiSi2 films with fine grains using Q‐switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro‐Raman spectroscopy, high‐resolution transmission electron microscopy, energy‐dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single‐phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid‐state reaction rather than liquid‐phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology. Copyright © 1999 John Wiley & Sons, Ltd.
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