Single crystalline silicon carbide (SiC) nanowires were grown directly on the surface of bulk SiC ceramic substrate in a catalyst-assisted thermal heating process. The morphology of the nanowire film and the diameter of nanowires were found to be sensitive to the thickness of catalyst film and both of them had a strong effect on field emission performance. Very low turn-on and threshold fields for electron emission were observed with SiC nanowires of small diameter. A model is proposed to qualitatively explain the field emission findings, which assumes the occurrence of an insulator-to-metal-like transition in a field emitting nanowire.
A phenomenon of field emission instability is reported. Field emission current oscillation was observed when a single zinc oxide (ZnO) one dimensional nanostructure operated at high current density. As a result, the radius curvature of the nanoemitter apex was sharpened to less than 15 nm. This indicates the oscillation was associated with melting of the emitter material. We found that the oscillation may be ascribed to (i) the behavior of charging and (ii) the shape changing of a metallic liquid ball that exists at the tip apex under high electric field. The net force of electric force and surface tension modifies the radius of the apex periodically, which results in the oscillation of field emission current. This finding may enhance the understanding of the physical process of field emission from ZnO nanostructures.
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