Field emission study of SiC nanowires/nanorods directly grown on SiC ceramic substrate

Deng, Shaozhi; Li, Z. B.; Wang, Weiliang; Xu, Ning; Zhou, Jun; Zheng, Xiaoliang; Xu, Haitao; Chen, Jun; She, Juncong

doi:10.1063/1.2220481

Cited by 89 publications

(52 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[13][14][15][16][17] Leu et al 13 verified that the addition of nickel was essential for the successful preparation of silicon carbide whiskers from the thermal decomposition of methyltrichlorosilane at 1300 • C. Jou and Hsu 15 synthesized straight and curled carbon nanotubes, CNTs by the pyrolysis of polycarbosilane and iron nanoparticles at temperatures between 800 and 1100 • C. These CNTs showed different morphologies, as functions of the molar mass of the polymeric precursor, as well as typical features of CNTs produced by the conventional gas-solid reactions using carbon vapor or hydrocarbon gases. These nanostructures can also be formed in the pores 12 and on the surface 18,19 of ceramic materials, as well as on the surface of substrates such as mesoporous activated carbon, 20 silicon 21 and SiC and alumina fibers. 22 Among the selected metals for inducing these types of nanostructures, nickel has received special attention due to its catalytic activity in promoting the nucleation of nanotubes and the formation of turbostratic carbon islands dispersed in polymer-derived ceramics, 12 GaN nanowires 23 and nanowires having a SiC core and a SiO 2 shell.…”

Section: Introductionmentioning

confidence: 98%

Investigation of the morphological changes promoted by heating of Si–C–O ceramics derived from a phenyl-rich hybrid polymer. Effect of Ni in the polymeric precursor

Segatelli

Radovanovic

Gonçalves

et al. 2009

Journal of the European Ceramic Society

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 98%

Investigation of the morphological changes promoted by heating of Si–C–O ceramics derived from a phenyl-rich hybrid polymer. Effect of Ni in the polymeric precursor

Segatelli

Radovanovic

Gonçalves

et al. 2009

Journal of the European Ceramic Society

View full text Add to dashboard Cite

“…1-D SiC nanostructures such as nanorods [1][2][3][4][5], nanobelts [6], nanowires [7][8][9][10], nanotubes [11], and nanocables [12][13][14][15][16][17][18] have potential as composite materials [19], field emission displays (FEDs) [20][21][22], photocatalysts [23], and electric nanodevices [24] for the use in high temperature and high power applications.…”

Section: Introductionmentioning

confidence: 99%

SiC nanowires in large quantities: Synthesis, band gap characterization, and photoluminescence properties

Chiu

2009

Journal of Crystal Growth

View full text Add to dashboard Cite

“…[11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters grown on rigid substrates. Particularly, the reported turn-on fields (E to , defined as the electric field required to generate a current density of 10 μA cm − 2 ) of SiC nanowires are in the range of 3.33-20 V μm − 1 , [14][15][16][17] and those of SiC nanorods and nanobelts are 13-17 V μm − 1 , 18 and 3.2 V μm − 1 , 19 respectively. E to can be further reduced to 0.7-2.9 V μm − 1 by using aligned SiC nanowires as emitters.…”

Section: Introductionmentioning

confidence: 99%

Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

View full text Add to dashboard Cite

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm − 1 , 1.55 V μm − 1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. NPG Asia Materials (2015) 7, e157; doi:10.1038/am.2014.126; published online 23 January 2015 INTRODUCTIONFlexible electronic devices have attracted extensive attention in recent decades because of their numerous promising applications, such as flexible energy-storage devices, wearable energy-harvesting systems and stretchable electronics. 1-4 Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates. These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.Silicon carbide (SiC) is an excellent material candidate for constructing advanced FE emitters. SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters

show abstract

Field emission study of SiC nanowires/nanorods directly grown on SiC ceramic substrate

Cited by 89 publications

References 7 publications

Investigation of the morphological changes promoted by heating of Si–C–O ceramics derived from a phenyl-rich hybrid polymer. Effect of Ni in the polymeric precursor

Investigation of the morphological changes promoted by heating of Si–C–O ceramics derived from a phenyl-rich hybrid polymer. Effect of Ni in the polymeric precursor

SiC nanowires in large quantities: Synthesis, band gap characterization, and photoluminescence properties

Highly flexible and robust N-doped SiC nanoneedle field emitters

Contact Info

Product

Resources

About