So far, plenty of microwave power circuits such as microwave diode rectifiers are mainly designed and analyzed by conventional electromagnetic (EM) co-simulation method based on the semiconductor equivalent circuit models. However, the simplified equivalent circuit model may contribute to loss of precision at high frequencies or under high power. Compared with the equivalent circuit model, the semiconductor physical model provides a means for studying the physics of electron transport, and thus, better describes the semiconductor device. This paper explores analyzing microwave diode rectifiers by employing a physical model-based field-circuit co-simulation method. This method combines the physical model-based circuit simulation to the finite-difference time-domain (FDTD)-based field-circuit co-simulation and thus, achieves accurate and effective hybrid full-wave field-circuit co-simulation. For validation, two diode rectifiers working at S-and C-band, respectively, are simulated and analyzed by the proposed method. The simulation result agrees well with measurement and shows higher accuracy than the equivalent circuit model-based simulation.INDEX TERMS Microwave rectifier, Schottky diode, physical model, filed-circuit co-simulation.
This manuscript presents a broadband high-efficiency dual-polarized dipole antenna for wireless power and data transfer. The proposed antenna mainly consists of cross-dipole patches, matching baluns, and a ground plane. The dual-polarized radiation mode was achieved by using two linear-polarization matching baluns to feed the cross-dipole patches orthogonally. The proposed dual-polarized dipole antenna realizes a bandwidth with S11 less than −10 dB (4.28 GHz–5.92 GHz) and a high radiation efficiency of about 95%. An independent rectifying circuit was designed, and a microwave energy transmission experiment was carried out. The final measured conversion efficiency for the two polarized ports at 5.8 GHz was about 77.6% and 76.4%, respectively. Simulation and measurement results showed that the proposed antenna is suitable for both wireless power and wireless data transfer applications.
This letter presents a novel C‐band rectifier that is capable of handling high input power. The rectifier consists of a Schottky diode, an impedance matching circuit with a compensation microstrip structure, and an output filter with harmonic suppression and ripple smoothing. The experimental results indicate that the rectifier yields a conversion efficiency exceeding 70% and a peak efficiency of 74.1% over a wide input power range of 20 to 26 dBm (6 dB) at 5.8 GHz, utilizing a single Si‐based Schottky diode. Furthermore, the rectifier has a compact size of 28 mm × 15 mm. Given its cost‐effectiveness and outstanding performance, this rectifier presents an attractive option for large‐scale microwave power applications.
In this paper, a dual-polarized stacked patch antenna for wireless communication and microwave power transfer is proposed. The stacked antenna consists of four rectangular apertures that are etched on the ground plane and four identical cross-placed coupling strips that are set on the upper layer of the ground plane, which are used to excite the top-layer patches. The presented stacked patch antenna was designed as a completely symmetric structure except for the feeding network, resulting in a simple structure and the same radiation patterns for the two polarized ports. The proposed antenna operates at around 5.8 GHz, and the simulation and measured results show that it has a gain of 8.5 dBi and an isolation of 25 dB. The measured antenna efficiency of the two polarized ports at 5.85 GHz was 89.2% and 88.6%, respectively. Finally, a rectifying circuit was designed, and the maximum measured conversion efficiency of the two polarized rectenna was 63.5% and 62.7%, respectively.
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