A Physical Model-Based FDTD Field-Circuit Co-Simulation Method for Schottky Diode Rectifiers

Abstract

So far, plenty of microwave power circuits such as microwave diode rectifiers are mainly designed and analyzed by conventional electromagnetic (EM) co-simulation method based on the semiconductor equivalent circuit models. However, the simplified equivalent circuit model may contribute to loss of precision at high frequencies or under high power. Compared with the equivalent circuit model, the semiconductor physical model provides a means for studying the physics of electron transport, and thus, better describes the semiconductor device. This paper explores analyzing microwave diode rectifiers by employing a physical model-based field-circuit co-simulation method. This method combines the physical model-based circuit simulation to the finite-difference time-domain (FDTD)-based field-circuit co-simulation and thus, achieves accurate and effective hybrid full-wave field-circuit co-simulation. For validation, two diode rectifiers working at S-and C-band, respectively, are simulated and analyzed by the proposed method. The simulation result agrees well with measurement and shows higher accuracy than the equivalent circuit model-based simulation.INDEX TERMS Microwave rectifier, Schottky diode, physical model, filed-circuit co-simulation.

Temperature Effects Analysis on Microwave Rectifiers by Field-Circuit Hybrid Multiphysics Simulation

“…By using the Newton-Raphson iteration method, Eq. ( 12) can be can be rewritten as an increment equation: (13) where a, b, c, and h are the coefficients. Eqs.…”

“…The physical model and package parameters of Schottky diode HSMS-282 and HSMS-286 have been extracted in the authors' previous work, they are listed in Table 1 and Table 2 respectively for easy reference [13]. state, especially the state of the semiconductor device (including electric field, carrier density distribution, and mobilities, temperature, etc.)…”

“…Silicon-based diodes of HSMS-282x series are widely used in microwave rectifier, featuring low costs and good RF characteristics. It is composed of thin epitaxial layers deposited on heavily doped substrates, with Schottky contacts at the anode and ohmic contacts at the cathode [13].…”

“…Thus, in the authors' previous work, a physical model-based field-circuit hybrid simulation method was proposed, and a good agreement between rectifier simulation and measurements was obtained. However, the temperature effects on the microwave rectifier were not taken into account in order to simplify the simulation process [13]. Since microwave rectifiers usually work under high frequency and/or large signals, the temperature effects cannot be ignored.…”

Análise Paramétrica do Modelo LE-FDTD para Dispositivos Eletrônicos Discretos

“…Porém, estes simuladores se mostram limitados para aplicações de circuitos híbridos de micro-ondas nos quais há tanto elementos concentrados quanto distribuídos. Para tais circuitos são indispensáveis simuladores eletromagnéticos capazes de avaliar possíveis efeitos de radiação na estrutura física do circuito bem como nos elementos circuitais discretos [2].…”