The method of creating ohmic contacts to the p-region of silicon by sputtering molybdenum in a BF3 plasma makes it possible to obtain the minimum transient resistance of the Mo/p+Si system before heat treatment (0.09 Ohm). This value is 4.4 times less than when molybdenum is sputtered in Ar plasma. With this processing method, it was shown that the minimum value of the transient resistance is slightly higher than when sputtering molybdenum by the magnetron method when using additional processing of a silicon wafer with active regions in a peroxide-ammonia solution, followed by holding the wafer in a vacuum of 410-3110-4 Pa for 3050 minutes at a temperature of 250350 C and re-treatment in a peroxide-ammonia solution before applying molybdenum (0.07 Ohm).
The work is devoted to the study of the stabilizing effect of yttrium additions during the deposition of thin aluminum films, which are used for the manufacture of elements of micro- and nanoelectronic devices. The surfaces of Al films doped with aluminum oxide were investigated using a scanning electron microscope before and after annealing for 300420 s at a temperature of 500 C. It is shown that fine alumina particles are uniformly distributed on the surface of the films during thermal evaporation of a wire made of an Al Al2O3 alloy. By the method of quantitative metallography, the content of the AlxOy phase in the Al films was determined: when spraying wire from the Al Al2O3 alloy, its content was 1012% of the mass fraction; when spraying wire made of Al Al2O3 alloy and Al wire in a ratio of 50:50 1% mass fraction.
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