Bis(trimethylsilyl)ethylamine (BTMSEA) was synthesized and characterized as CVD precursor for silicon carbonitride SiC x N y films synthesis (vapor pressure, thermodynamic modeling). SiC x Ny films were deposited by PECVD from BTMSEA in the temperature range of 100-700 o C using two additional gases (He or NH 3 ). FT-IR, Raman spectroscopy, ellipsometry, EDX, SEM, UV-Visible spectroscopy and nanoindentation tests were used for film characterization. FT-IR analysis showed that temperature increase lead to the transition from a low-temperature polymeric-like films to the high-temperature inorganic material. It was also shown that the high-temperature films content predominantly Si-C bonds independently on the additional gas type. As it was confirmed by Raman spectroscopy, hightemperature SiC x N y films content carbon phase. Ammonia addition into the reaction mixture resulted in the shift of the temperature boundary of carbon phase-free region. The transmittance of SiC x N y films obtained using BTMSEA + He mixture in the deposition temperature range of 100-500 o C was 85-95 % and decreased significantly in the case of carbon phase formation at T dep more than 500 o C. Optical band gap estimated from UV-Vis spectra varied in the range of 1.9-4.4 eV depending on the deposition temperature. NH 3 addition to initial mixture led to the film transmittance decrease to 80-90 %, the optical band gap changed in the range of 2.0-5.1 eV. Nanoindentation tests showed that hardness of the films synthesized at high temperature was 18.5-21.5 GPa.
The excellent transparent in wide region of spectra, nanocomposite SiCxNy:H films were synthesized by RPECVD using hexamethylcyclotrisilazane in mixture of helium and nitrogen in the temperature range of 373-1073 K. The analysis of FTIR, XPS and Raman spectroscopy results showed that low temperature films are hydrogenated silicon oxycarbonitride. There are the formation of chemical bonding between Si, C, N atoms with predominate surrounding of Si atoms by nitrogen atoms and the absence of hydrogenous bonds in high temperature films. C-V and I-V measurements showed that SiCxNy:H films are low-k dielectrics. Thermal annealing of these films leads to their densifying, ordering of structure and increase of nanocrystals' size.
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