An experimental method for determining the range of alpha particles in films based on I-V(s) analysis has been suggested. The range of 5.5 MeV alpha particles in PbI(2) films determined by this technique is 30+/-5 microm, and this value is in agreement with the value calculated by SRIM (the stopping and range of ions in matter), r=24 microm in PbI(2). More than 100 I-V(s) of PbI(2) films with different thicknesses and quality have been analyzed, and the influence of alpha particle radiation on PbI(2) I-V(s) curves has been studied. Developed analytical methods (dependence of current density on electric field and conception of surface defects) were used, and the method limitations are discussed. It was shown that I-V(s) demonstrate the tendency to obey Ohm's law under alpha radiation. On the other hand, dark conductivity of the lead iodide films shows a typical impure character that can lead to an overestimation of the alpha particles' range in PbI(2) films. After films were exposed to alpha radiation, the dark resistivity and I-V shape of some films improved. Also, a weak decrease of the charge carrier concentration, due to a decrease of the "surface defect" concentration ("surface refining"), was registered after successive measurements of I-V(s).
Vapor deposited lead iodide films show a wide range of physical attributes dependant upon fabrication conditions. High density is most readily achieved with films less than 100 µm. Thicker films, with lessening density, often show lower response (gain) as charge collection becomes less efficient. Lack of consistency in density throughout a deposition invariably leads to non-uniform electronic properties, which is challenging to both model and predict. To overcome this, tighter control of deposition parameters is required during the slow growth process (<10 µm/hour). Lead iodide films are characterized in forms of planar devices deposited onto conductive glass and active pixel arrays deposited onto a-Si TFT arrays 1 . Electronic properties (e.g. leakage current, gain) show little variation that can be traced to substrate choice. Films generally provide less than 100 pA/mm 2 leakage current as they show saturation in gain (at approximate fields of 1 V/µm). We recently modified our readout electronics to accept positive bias. Using positive bias on the top electrode provides better charge collection for the lower mobility electrons and (despite process variability) better quality films can provide sensitivities greater than 6 µC/R*cm 2 , with only partial x-ray absorption, and show less than 20 pA/mm 2 dark current.
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