A new TFT array has been developed specifically for mercuric iodide (HgI 2 ) deposition. This new TFT array combined with a modified HgI 2 Physical Vapor Deposition (PVD) process provides less than 10 pA/mm 2 dark current at room temperature (22 o C) measured at 1 V/µm electrical field. This photoconductor (direct) imager was run at 10 fr/s framerate and gave a measured sensitivity of 19 µC/(R*cm 2 ) using a RQA5 radiation quality x-ray beam (70kVp x-ray with 21 mm Al filtering). This sensitivity value is higher than the sensitivity reported by our group for any previous HgI 2 imagers.MTF, NPS and DQE values were also evaluated on this 13 cm x 13 cm size imager with 127 µm pixel pitch. The MTF value is higher than 40% at the Nyquist frequency (3.9 lp/mm). This is much better than the MTF of a 600 µm CsI scintillator/photodiode (indirect) imager, which is only 16% (Varian internal data) and it is similar to the MTF value of the a-Se (another photoconductor) imagers. The first frame image lag is less than 8% when the imager was run at a 10 fr/s framerate.The low dark current and some noise reduction in the detector electronics, made it possible for the DQE to be measured down to low fluoroscopic dose levels (< 4 µR/fr). The DQE(0) value is over 50% at a dose of 35 µR/fr and still about 40% at 3.76 µR/fr.The 270 µm thick PVD HgI 2 layer only absorbs less than 75% of the ~51 keV mean energy X-ray photons (70 kVp RQA5 filtered beam). This means that if the thickness of the HgI 2 layer is increased to 500 µm (increasing the absorption up to over 90%) the DQE(0) should then increase to about 60-65% (assuming everything else remains unchanged). This value is close to the 65 -70 % DQE(0), measured for the indirect (CsI) imagers at higher doses. Such a high DQE value makes this material competitive both for fluoroscopic and for radiographic applications.
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