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Precursor of polyimide, polyamic acid has been prepared sucessfully. Acid‐modified carbon nanotube (MWCNT) was grafted with soluble polyimide then was added to the polyamic acid and heated to 300 °C to form polyimide/carbon nanotube composite via imidation. Morphology, mechanical properties and electrical resistivity of the MWCNT/polyimide composites have been studied. Transmission electron microscope microphotographs show that the diameter of soluble polyimide‐grafted MWCNT was increased from 30–60 nm to 200 nm, that is a thickness of 70–85 nm of the soluble polyimide was grafted on the MWCNT surface. PI‐g‐MWCNT was well dispersed in the polymer matrix. Percolation threshold of MWCNT/polyimide composites has been investigated. PI‐g‐MWCNT/PI composites exhibit lower electrical resistivity than that of the acid‐modified MWCNT/PI composites. The surface resistivity of 5.0 phr MWCNT/polyimide composites was 2.82 × 108 Ω/cm2 (PI‐g‐MWCNT) and 2.53 × 109 Ω/cm2 (acid‐modified MWCNT). The volume resistivity of 5.0 phr MWCNT/polyimide composites was 8.77 × 106 Ω cm (PI‐g‐MWCNT) and 1.33 × 1013 Ω cm (acid‐modified MWCNT).Tensile strength and Young's modulus increased significantly with the increase of MWCNT content. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3349–3358, 2007

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This paper describes the development, fabrication and examination of an atom chip through silicon vias (TSV), which is anodically bonded with a Pyrex glass cell to form an ultra-high-vacuum system for the application of Bose-Einstein condensation (BEC) experiments. The silicon via is etched by the inductively coupled plasma reactive ion etch and filled by copper plating technology. The metal wires on both sides of the atom chips are patterned by the lithography process. Three different sizes of TSV are made and tested by continuously applying a maximum current of 17 A under the vacuum (70 Torr) and in air. In addition, after the thermal cycling of an anodic bonding process (requested at 350 • C) and a high electric field of 1000 V m −1 , the TSV on atom chips can still hold the ultra-high vacuum (UHV). The conductive and vacuum yields of the TSV improved from 50% to 100% and from 75% to 81.25%, respectively after the modification of the fabrication process. Finally, the UHV test of TSV on atom chips at room temperature can be reached at 8 × 10 −10 Torr, thus satisfying the requirements of atomic physics experiments under the UHV environment.