Optical resonators with high quality factors (Qs) are promising for a variety of applications due to the enhanced nonlinearity and increased photonic density of states at resonances. In particular, frequency combs (FCs) can be generated through four-wave mixing in high-Q microresonators made from Kerr nonlinear materials such as silica, silicon nitride, magnesium fluoride, and calcium fluoride. These devices have potential for on-chip frequency metrology and high-resolution spectroscopy, high-bandwidth radiofrequency information processing, and high-data-rate telecommunications. Silicon nitride microresonators are attractive due to their compatibility with integrated circuit manufacturing; they can be cladded with silica for long-term stable yet tunable operation, and allow multiple resonators to be coupled together to achieve novel functionalities. Despite previous demonstrations of high-Q silicon nitride resonators, FC generation using silicon nitride microresonator chips still requires pump power significantly higher than those in whispering gallery mode resonators made from silica, magnesium, and calcium fluorides, which all have shown resonator Qs between 0.1 and 100 billion. Here, we report on a fabrication procedure that leads to the demonstration of "finger-shaped" Si 3 N 4 microresonators with intrinsic Qs up to 17 million at a free spectrum range (FSR) of 24.7 GHz that are suitable for telecommunication and microwave photonics applications. The frequency comb onset power can be as low as 2.36 mW and broad, single FSR combs can be generated at a low pump power of 24 mW, both within reach of on-chip semiconductor lasers. Our demonstration is an important step toward a fully integrated on-chip FC source. Kerr comb generation in microresonators starts when an external continuous-wave (CW) laser is tuned into a cavity resonance; this causes intracavity power to build, which enables additional cavity modes to oscillate through nonlinear wave mixing [10]. FC formation has now been demonstrated in a variety of Kerr nonlinear materials such as silica [9,14-18], silicon nitride (Si 3 N 4 ) [19-21], aluminum nitride [22], CaF 2 [23], and MgF 2 [24]. Recently, dissipative Kerr solitons have also been demonstrated in MgF 2 and Si 3 N 4 optical microresonators [25,26]. Out of these materials, stoichiometric Si 3 N 4 has distinctive 2334-2536/16/111171-10 Journal
We propose an on-chip optical power delivery system for dielectric laser accelerators based on a fractal 'tree-branch' dielectric waveguide network. This system replaces experimentally demanding free-space manipulations of the driving laser beam with chip-integrated techniques based on precise nano-fabrication, enabling access to orders of magnitude increases in the interaction length and total energy gain for these miniature accelerators. Based on computational modeling, in the relativistic regime, our laser delivery system is estimated to provide 21 keV of energy gain over an acceleration length of 192 µm with a single laser input, corresponding to a 108 MV/m acceleration gradient. The system may achieve 1 MeV of energy gain over a distance less than 1 cm by sequentially illuminating 49 identical structures. These findings are verified by detailed numerical simulation and modeling of the subcomponents and we provide a discussion of the main constraints, challenges, and relevant parameters in regards to on-chip laser coupling for dielectric laser accelerators.
Ap hosphorous-modified Al 2 O 3 support was prepared by the impregnation methoda nd applied for the preparation of cobalt-based Fischer-Tropsch synthesis (FTS) catalysts (Co/P-Al 2 O 3 ), which were calcined at different temperatures. The Co/ P-Al 2 O 3 showed as ignificant increaseo ft hermals tability with ah igher catalytic performance without severe deactivation even above ac alcination temperature of 600 8Cc ompared with the unmodified Co/Al 2 O 3 .T hese findings are explained by the suppressed cobalt aluminate formation and less pronounced aggregation of cobaltp articles. The suppressed aggregation of cobalt particles is attributed to the localized presence of aluminump hosphate by forming at hermally stable metal-phosphorous oxo-species on Al 2 O 3 surfaces thus suppressing the migration of cobalt particles to the outer pore mouths of the support. These effects significantly enhance the catalytic activity with ah igher thermal stabilityo ft he catalysts.
Electromagnetic coupling is ubiquitous in photonic systems and transfers optical signals from one device to the other, creating crosstalk between devices. While this allows the functionality of some photonic components such as couplers, it limits the integration density of photonic chips, and many approaches have been proposed to reduce the crosstalk. However, due to the wave nature of light, complete elimination of crosstalk between closely spaced, identical waveguides is believed to be impossible and has not been observed experimentally. Here we show an exceptional coupling that can completely suppresses the crosstalk utilizing highly anisotropic photonic metamaterials. The anisotropic dielectric perturbations in the metamaterial mutually cancel the couplings from different field components, resulting in an infinitely long coupling length. We demonstrate the extreme suppression of crosstalk via exceptional coupling on a silicon-on-insulator platform, which is compatible with a complementary metal-oxide-semiconductor process. The idea of exceptional coupling with anisotropic metamaterials can be applied to many other electromagnetic devices, and it could drastically increase the integration density of photonic chips.
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