A convenient route at ambient conditions was employed to prepare narrow-dispersed ZnO nanorods in terms of size and morphology. Transmission electron microscopy and X-ray diffraction were used to characterize the structurally uniform and well-proportioned products. The as-prepared specimen exhibits strong ultraviolet exciton emission at 385 nm and disappearance of visible defect emission.

Cataloged from PDF version of article.We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p(+)/n(+) tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p(+)-GaN and n(+)-GaN layers. (C) 2013 AIP Publishing LLC

Plasmonics exhibits the potential to break the diffraction limit and bridge the gap between electronics and photonics by routing and manipulating light at the nanoscale. However, the inherent and strong energy dissipation present in metals, especially in the near-infrared and visible wavelength ranges, significantly hampers the applications in nanophotonics. Therefore, it is a major challenge to mitigate the losses. One way to compensate the losses is to incorporate gain media into plasmonics. Here, we experimentally show that the incorporation of gain material into a local surface plasmonic system (Au/silica/silica dye core-multishell nanoparticles) leads to a resonant energy transfer from the gain media to the plasmon. The optimized conditions for the largest loss compensation are reported. Both the coupling distance and the spectral overlap are the key factors to determine the resulting energy transfer. The interplay of these factors leads to a non-monotonous photoluminescence dependence as a function of the silica spacer shell thickness. Nonradiative transfer rate is increased by more than 3 orders of magnitude at the resonant condition, which is key evidence of the strongest coupling occurring between the plasmon and the gain material.

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Highly luminescent semiconducting AgInS2–ZnS solid solution nanorods are successfully prepared by a facile one‐pot solvothermal method. The resulting solid solution nanorods with length of 32 ± 5 nm are formed by fast growth of the AgInS2‐rich solid solution head, followed by slow growth of the ZnS‐rich solid solution tail. Photoluminescence studies on the solid solution nanorods reveal strong photoluminescence with peak emission wavelengths tunable from 650 to 700 nm.