Polymer materials exhibit unique properties in the fabrication of optical waveguide devices, electromagnetic devices, and bio-devices. Direct laser writing (DLW) technology is widely used for micro-structure fabrication due to its high processing precision, low cost, and no need for mask exposure. This paper reviews the latest research progresses of polymer-based micro/nano-devices fabricated using the DLW technique as well as their applications. In order to realize various device structures and functions, different manufacture parameters of DLW systems are adopted, which are also investigated in this work. The flexible use of the DLW process in various polymer-based microstructures, including optical, electronic, magnetic, and biomedical devices are reviewed together with their applications. In addition, polymer materials which are developed with unique properties for the use of DLW technology are also discussed.
With the increasing sensitivity and accuracy of contemporary high-performance electronic information systems to electromagnetic energy, they are also very vulnerable to be damaged by high-energy electromagnetic fields. In this work, an all-dielectric electromagnetic field sensor is proposed based on a microring resonator structure. The sensor is designed to work at 35 GHz RF field using a lithium niobate-on-insulator (LNOI) material system. The 2.5-D variational finite difference time domain (varFDTD) and finite difference eigenmode (FDE) methods are utilized to analyze the single-mode condition, bending loss, as well as the transmission loss to achieve optimized waveguide dimensions. In order to obtain higher sensitivity, the quality factor (Q-factor) of the microring resonator is optimized to be 106 with the total ring circumference of 3766.59 μm. The lithium niobate layer is adopted in z-cut direction to utilize TM mode in the proposed all-dielectric electric field sensor, and with the help of the periodically poled lithium niobate (PPLN) technology, the electro-optic (EO) tunability of the device is enhanced to 48 pm·μm/V.
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