This paper reports enhanced internal-quantum-efficiency (IQE) in InGaN-based multi-quantum-well (MQW) grown on Si(111) substrate with underlying strained-layer-superlattice (SLS) cladding layer for application in LDs and LEDs. In comparative study between a thick Al0.03Ga0.97N bulk and an Al0.06Ga0.94N/GaN SLS cladding layer, transmission-electron-microscopy (TEM) images reveal that Al0.06Ga0.94N/GaN SLS cladding layer is effective to suppress threading dislocations. A higher IQE has been achieved in sample with underlying Al0.06Ga0.94N/GaN SLS cladding layer, compared to that of Al0.03Ga0.97N bulk cladding layer. IQE of 31.6% has been achieved in sample with underlying Al0.06Ga0.94N/GaN SLS cladding layer when the MQW thickness is reduced to 2 nm.
This paper reports improved optical characteristics of InGaN-based light-emitting-diode (LED) grown on Si(111) substrate by the insertion of an Al0.06Ga0.94N/GaN strained-layer-superlattices (SLS) cladding layer after AlN/GaN multilayer (ML) growth, under the multi-quantum-well (MQW) active layer. The insertion of underlying Al0.06Ga0.94N/GaN SLS cladding layer has shown to improve epitaxial layer quality in x-ray diffraction (XRD) analysis, reduce wavelength peak fluctuations in photoluminescence (PL) surface mapping, and improve optical and electrical characteristics of the LED sample. A 34% increase of light intensity at 50 mA current injection and a narrower wavelength peak have been achieved by the insertion of Al0.06Ga0.94N/GaN SLS cladding layer. LED with underlying Al0.06Ga0.94N/GaN also shows superior current-voltage (I-V) characteristics with operation voltage of 3.2 V at 20 mA and series resistance of 16 Ω.
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