In this paper, we report high-temperature (up to 573 K) device characteristics, such as subthreshold characteristics, threshold voltage, on-resistance, breakdown characteristics, breakdown voltage, and leakage current, for the thin-film silicon-on-insulator power MOSFETs based on experimental results. The subthreshold slope, on-resistance, and leakage current increase with increasing temperature. The breakdown voltage and threshold voltage decrease with increasing temperature. Dependences of these characteristics on the channel and drift lengths are also analyzed.
In this paper, we describe the parasitic bipolar effect of the fabricated thin-film silicon-on-insulator (SOI) power metal–oxide–semiconductor field-effect transistor (MOSFET) at high temperatures. This effect in the on-state was suppressed as temperature increased. This effect in the off-state was promoted as temperature and body contact pitch increased. The parasitic bipolar effect caused by the thermally generated current is enhanced by increasing temperature and decreasing channel length. This reduced breakdown voltage.
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