Pure and fine powder of zinc oxide was prepared by hydrolysis of bis(acetylacetonato)zinc(II) in methanol–water mixture. A significant difference in the particle shape was observed by TEM between ZnO powders prepared at 25 and 80 °C.
The oxidized form of catechol (1,2-benzoquinone) reacts with aniline at neutral pH range and the electroactive 1:1 and 1:2 compounds of catechol and aniline which exhibit separative reversible redox waves are produced and their formal electrode potentials are ¹0.05 V and ¹0.23 V, respectively. The 1:1 compound is considered to be an adduct with pink color and the 1:2 compound is considered to be two anilines substituted catechol from the MS data of molecular weight (290) and 1 H and 13 C NMR data. The 1:2 compound accumulates on the carbon electrode surface due to its affinity to the carbon felt electrode and a detection limit of this compound was found to be 5 × 10 ¹9 M.
The measurement of reversible redox waves of very low concentrations of 4-aminodiphenylamine and 4-hydroxydiphenylamine (below 1 x M) were carned out by using a porous carbon felt electrode. The high sensitivity of the porous carbon felt electrode may be based on the surface affinity to both compounds, resulting in accumulation. Reversible redox waves of 4-hydroxydiphenylamine appeared during the multicyclic voltammograms of 1 x M 4-aminodiphenylamine at a neutral pH solution when a porous carbon felt electrode is used, although the glassy carbon electrode did not show the distinct redox waves. The hydrolysis rate constants of the quinonediimine state of 4-aminodiphenylamine at neutral pH range have not been measured due to its low solubility. The hydrolysis rate constants of the quinonediimine state of 4aminodiphenylamine at neutral pH are measured by the decrease and increase rates of 4-aminodiphenylamine and 4-hydroxydiphenylamine, respectively, using cyclic voltammetry The first order rate constant of hydrolysis of the quinonediimine state at pH7.0 was found to be 9.1 x Keywords: 4-Aminodiphenylamine, Carbon felt electrodes s-' and did not significantly depend on the proton concentration in a neutral pH range.
With continuous down scaling of semiconductor devices, poly depletion has become a significant portion of gate dielectric inversion thickness. In an effort to reduce poly depletion, nano-crystalline grained (NCG) silicon has been developed using a rapid thermal chemical vapor deposition process. The grain structures were controlled through varying deposition temperature, pressure and flow rate of gases. NCG silicon formation has been engineered through a new two step process. The structure demonstrated retention of nano-crystalline characteristics with limited grain growth after boron and phosphorous doping and high temperature dopant activation annealing. Higher boron concentration at gate and dielectric interface provides a potential poly depletion reduction of about 1.2 Aå, compared with conventional columnar grained poly- silicon.
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