To develop the high-performance filters and duplexers required for recent long-term evolution frequency bands in mobile handsets, a surface acoustic wave (SAW) resonator is needed that has a higher quality (Q) and a lower temperature coefficient of frequency (TCF). To achieve this, the authors focused on acoustic energy confinement in the depth direction for a rotated Y-X LiTaO (LT) substrate. Characteristics of multilayered substrates with low-impedance and high-impedance layers under LT layer were studied numerically in terms of acoustic energy distribution, phase velocity, coupling coefficient, and temperature characteristics employing a finite-element method simulation. After several calculations, a novel multilayered structure was developed that uses SiO for a low-impedance layer and AlN for a high-impedance layer under the thin LT layer. A one-port resonator using the new substrate was fabricated, and its experimental results showed that the developed resonator had a Bode-Q over 4000 and TCF of -8 ppm/°C, which are four times higher than and one-fifth as small as those of a conventional 4° YX-LT SAW resonator, respectively. By applying this technology, a band 25 duplexer with very narrow duplex gap was successfully developed, which shows extremely low insertion loss, steep cutoff characteristics, and stable temperature characteristics.

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