Incredible high performance SAW resonator on novel multi-layerd substrate

Takai, Tsutomu; Iwamoto, Hideki; Takamine, Yuichi; Yamazaki, Hisashi; Fuyutsume, Toshiyuki; Kyoya, Haruki; Nakao, Takeshi; Kando, Hajime; Hiramoto, Masahiro; Toi, Takanori; Koshino, Masayoshi; Nakajima, Noriaki

doi:10.1109/ultsym.2016.7728455

Cited by 84 publications

(35 citation statements)

References 14 publications

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“…We chose to work with the Lamb wave mode for two main reasons: the higher acoustic velocity (≈ 5414 m/s) compared to the SAW mode enables more efficient access to higher frequencies (3-6 GHz), and the tighter confinement in the GaN layer (Fig. 1(b)) which results in a higher transduction efficiency (and lower insertion loss) when excited by an interdigitated transducer (IDT) [10,15]. Fig.…”

Section: Design and Fem Modelling Of Acoustic Wave Propagationmentioning

confidence: 99%

“…* krishna.coimbatorebalram@bristol.ac.uk While the analogy between photonics and phononics has been extensively explored [6,7], there has been relatively little application of these ideas to the problem of shrinking the footprint of traditional acoustic wave devices, especially at GHz frequencies [8,9]. Murata's recent IHP-SAW [10] demonstration shows the benefits of acoustic wave confinement. While 1D SAW confinement exhibits a significant improvement in device performance, it does not lead to a reduction in device footprint.…”

Section: Introductionmentioning

confidence: 99%

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Gallium nitride phononic integrated circuits for future RF front-ends

Bicer,

Valle,

Brown

et al. 2021

Preprint

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Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile devices, especially as we move towards the 6G era. This requires a significant (≈ 100x) reduction in the size of the RF passives, from mm 2 footprints in current devices to tens of µm 2 in future systems. Applying ideas from integrated photonics, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in µm-scale gallium nitride (GaN) waveguides by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building monolithically integrated RF front-ends in GaN-on-SiC.

show abstract

Section: Design and Fem Modelling Of Acoustic Wave Propagationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Gallium nitride phononic integrated circuits for future RF front-ends

Bicer,

Valle,

Brown

et al. 2021

Preprint

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“…Giving LGS (0

, 138.5

, 117

) SAW device (wavelength

) with a metallized surface as an example, the total displacement (i.e., vibration shape) and the distribution of acoustic energy are plotted in Figure 2 a,b, respectively. Figure 2 a clearly shows that there is a leaky wave propagating in the body of LGS substrate, which is due to the existence of SH displacement component [ 31 , 32 ]. In Figure 2 b, the displacements of P, SH, and SV waves are plotted as a function of normalized depth (

) into LGS substrate, where P ( x displacement), SH ( y displacement), and SV ( z displacement) represent longitudinal, shear horizontal, and shear vertical wave components, respectively.…”

Section: Modelingmentioning

confidence: 99%

Mode Analysis of Pt/LGS Surface Acoustic Wave Devices

Jin

Dong

et al. 2020

Sensors

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Platinum (Pt) gratings on langasite (LGS) substrates are a widely used structures in high temperature surface acoustic wave (SAW) devices. Multiple modes can be excited in Pt/LGS SAW devices owing to the heavy weight of the Pt electrode and leaky waves in the LGS substrate. In this work, we report on a detailed mode analysis of Pt/LGS SAW devices, where three commonly used LGS cuts are considered. A three-dimensional (3D) finite element method (FEM) numerical model was developed, and the simulation and experiment results were compared. The experiment and simulation results showed that there are two modes excited in the Pt/LGS SAW devices with Euler angle (0°, 138.5°, 27°) and (0°, 138.5°, 117°), which are Rayleigh-type SAW and SH-type leaky wave, respectively. Only the Rayleigh-type mode was observed in the Pt/LGS SAW devices with Euler angle (0°, 138.5°, 72°). It was found that the acoustic velocities are dependent on the wavelength, which is attributed to the change of wave penetration depth in interdigital transducers (IDTs) and the velocity dispersion can be modulated by the thickness of the Pt electrode. We also demonstrated that addition of an Al2O3 passivation layer has no effect on the wave modes, but can increase the resonant frequencies. This paper provides a better understanding of the acoustic modes of Pt/LGS SAW devices, as well as useful guidance for device design. It is believed that the Rayleigh-type SAW and SH-type leaky waves are potentially useful for dual-mode sensing applications in harsh environments, to achieve multi-parameter monitoring or temperature-compensation on a single chip.

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“…The next‐generation of high‐frequency (5–6 GHz) and/or wide‐band RF filters or frequency‐agile filters are urgently needed for the development of fifth‐generation (5G) of infrastructures/networks/communications. In 2017, Murata Manufacturing starts mass production of a high performance SAW duplexer, based on an energy confined structure including single crystalline LT films . The acoustic wave energy was confined in the LT layer by using a multilayered structure of low‐ and high‐impedance layers on Si.…”

Section: Final Remarks and Outlookmentioning

confidence: 99%

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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Incredible high performance SAW resonator on novel multi-layerd substrate

Cited by 84 publications

References 14 publications

Gallium nitride phononic integrated circuits for future RF front-ends

Gallium nitride phononic integrated circuits for future RF front-ends

Mode Analysis of Pt/LGS Surface Acoustic Wave Devices

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

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Incredible high performance SAW resonator on novel multi-layerd substrate

Cited by 84 publications

References 14 publications

Gallium nitride phononic integrated circuits for future RF front-ends

Gallium nitride phononic integrated circuits for future RF front-ends

Mode Analysis of Pt/LGS Surface Acoustic Wave Devices

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

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Product

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications