A magnetic bimeron is an in-plane topological counterpart of a magnetic skyrmion. Despite the topological equivalence, their statics and dynamics could be distinct, making them attractive from the perspectives of both physics and spintronic applications. In this work, we demonstrate the stabilization of bimeron solitons and clusters in the antiferromagnetic (AFM) thin film with interfacial Dzyaloshinskii–Moriya interaction (DMI). Bimerons demonstrate high current-driven mobility as generic AFM solitons, while featuring anisotropic and relativistic dynamics excited by currents with in-plane and out-of-plane polarizations, respectively. Moreover, these spin textures can absorb other bimeron solitons or clusters along the translational direction to acquire a wide range of Néel topological numbers. The clustering involves the rearrangement of topological structures, and gives rise to remarkable changes in static and dynamical properties. The merits of AFM bimeron clusters reveal a potential path to unify multibit data creation, transmission, storage, and even topology-based computation within the same material system, and may stimulate spintronic devices enabling innovative paradigms of data manipulations.
Artificial heterostructures based on LaNiO (LNO) have been widely investigated with the aim to realize the insulating antiferromagnetic state of LNO. In this work, we grew [(LaSrMnO)-(LaNiO)] superlattices on (001)-oriented SrTiO substrates by pulsed laser deposition and observed an unexpected exchange bias effect in field-cooled hysteresis loops. Through X-ray absorption spectroscopy and magnetic circular dichroism experiments, we found that the charge transfer at the interfacial Mn and Ni ions can induce a localized magnetic moment. A remarkable increase of exchange bias field and a transition from metal to insulator were simultaneously observed upon decreasing the thickness of the LNO layer, indicating the antiferromagnetic insulator state in 2 unit cells LNO ultrathin layers. The robust exchange bias of 745 Oe in the superlattice is caused by an interfacial localized magnetic moment and an antiferromagnetic state in the ultrathin LNO layer, pinning the ferromagnetic LaSrMnO layers together. Our results demonstrate that artificial interface engineering is a useful method to realize novel magnetic and transport properties.
Two-dimensional group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) are recently explored to be potential in gas sensor applications. In this work, a combined theoretical and experimental study on pure SnS...
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