Highly sensitive NO<sub>2</sub> sensors based on core‐shell array of silicon nanowires/polypyrrole and new insight into gas sensing mechanism of organic/inorganic hetero‐contact

Qin, Yuxiang; Cui, Zhenduo; Wen, Zongze; Bai, Yuhao

doi:10.1002/pc.25183

Cited by 16 publications

(16 citation statements)

References 49 publications

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“…The electrical readout can be done by applying a DC or AC voltage to the electrical contacts (electrodes/metallization) and monitoring the current passing through SiNWs, or by direct measurement of the resistance by a sensitive ohmmeter. As described above the adsorption of the gas molecules onto the nanowires surface changes the conductance of the sensing structure, which changes the current or resistance output [115][116][117]. Gas concentration is indicated here by the amount of change in sensor resistance or current flow upon exposure to the gas molecules.…”

Section: Resistors and Field Effect Transistors For Gas Sensingmentioning

confidence: 99%

“…Qin et al presented studies about SiNWs functionalized by PPy for NH 3 [166] and NO 2 [117] sensing. In first work, NH 3 sensing was compared both PPy NPs decorate and PPy shell coated loose SiNWs (LNWs) array prepared using double step Ag-MACE method.…”

Section: Heterojunctions With Organic Semiconductorsmentioning

confidence: 99%

“…In another work [117], the authors concentrated only on the PPy-shell@LNWs structures and their NO 2 sensing properties at sub ppm and ppm concentration range. They focused here on the PPy-shell film thickness influence on the NO 2 sensing.…”

Section: Heterojunctions With Organic Semiconductorsmentioning

confidence: 99%

“…However, the authors stressed here that, at higher RH (higher than 50%), the sensing properties are dropping down. Reproduced from [117], with permission from John Wiley and Sons, 2020.…”

Section: Heterojunctions With Organic Semiconductorsmentioning

confidence: 99%

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Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

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Section: Resistors and Field Effect Transistors For Gas Sensingmentioning

confidence: 99%

Section: Heterojunctions With Organic Semiconductorsmentioning

confidence: 99%

Section: Heterojunctions With Organic Semiconductorsmentioning

confidence: 99%

“…However, the authors stressed here that, at higher RH (higher than 50%), the sensing properties are dropping down. Reproduced from [117], with permission from John Wiley and Sons, 2020.…”

Section: Heterojunctions With Organic Semiconductorsmentioning

confidence: 99%

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Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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“…The conductive material will not produce “cracks” when they are stretched. However, this kind of sensor has a distinct feature with its own drawback: a lower Poisson ratio, which corresponds to lower sensitivity [ 42 ] as compared to the first type.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a wrinkled structure made of wearable polyacrylonitrile/polyurethane composite fibers with elastic sensing properties suitable for human movement detection

Lü

2020

Polymer Composites

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Research in wearable sensors is guided by the need for bendable, comfortable, and deformable sensors. In this study, an elastic electronic sensor is fabricated to monitor human movement. It adopts a centrifugal electrospinning technology, and the fibers form a wavy wrinkled structure by itself. This structure gives the sensor good resistance response under high strength deformation. After stretching to 180% of the original length, the numerical value of resistance is increased by 2000%. The sensor generates different signals that depend upon the variation in different human actions, making it suitable for use as a monitor of human movement.

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Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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classified into two common approaches: bottom-up chemical synthesis, such as vapor-liquid-solid growth, [16][17][18][19][20] and topdown fabrication schemes. [21][22][23] This review will focus on the top-down fabrication of Si structures using a wet chemical etching technique aided with a metal catalyst, called metal-assisted chemical etching (MaCE). [24][25][26][27][28][29][30][31][32] In comparison with top down fabrication methods based on dry etching using a reactive plasma in vacuum, MaCE is less expensive and less complex. [33][34][35] MaCE is a nano-scale reductionoxidation (redox) process that usually occurs in aqueous solution where the sample to be etched is in contact with the etchant. MaCE is a simple, cost-effective, and versatile method to produce Si nanostructures; due to these attractive features, there have been many good review articles published on the process. [36][37][38][39][40][41][42] With two-decades of research of the MaCE and its innovative variations, recent studies have focused on the various applications of Si nanostructures prepared by MaCE, including photovoltaics, [43,44] thermoelectrics and piezoelectric nanogenerators, [45] energy storage, [46][47][48] nanophotonics and optoelectronics, [49] and biosensors and biomedical applications. [50][51][52] In this review, we provide an overview of the recent advances in MaCE processes and their novel applications. To differentiate this review from previous review articles, the main emphasis is on the recently developed novel MaCE processes and the macroscale structuring of Si by MaCE. We begin the review by describing new MaCE processes, particularly catalysts for MaCE. In contrast to well-known noble metal catalysts, such as Ag, Au, and Pt, carbon-based catalysts, such as graphene, graphene oxide, and carbon nanotubes, have been successfully applied as catalysts for MaCE. In addition, TiN has been found to be a catalyst for MaCE, making the whole process CMOS-compatible. Different types of etch additives, such as various alcohols and chlorides, have also been discussed, which enhance etch uniformity by increasing the wettability of etchants and suppressing the random diffusion of excessive (holes) h + by trapping them for better etch control. Recent novel variations of the MaCE process have been introduced, such as MaCE with externally applied electric or magnetic fields. The external field has a profound effect on the output of MaCE, by controlling the etch directionality and etch rate. In addition, MaCE can be combined with unconventional patterning techniques, StructuringSi, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the succe...

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Highly sensitive NO₂ sensors based on core‐shell array of silicon nanowires/polypyrrole and new insight into gas sensing mechanism of organic/inorganic hetero‐contact

Cited by 16 publications

References 49 publications

Silicon Nanowires for Gas Sensing: A Review

Silicon Nanowires for Gas Sensing: A Review

Fabrication of a wrinkled structure made of wearable polyacrylonitrile/polyurethane composite fibers with elastic sensing properties suitable for human movement detection

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

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Highly sensitive NO2 sensors based on core‐shell array of silicon nanowires/polypyrrole and new insight into gas sensing mechanism of organic/inorganic hetero‐contact

Cited by 16 publications

References 49 publications

Silicon Nanowires for Gas Sensing: A Review

Silicon Nanowires for Gas Sensing: A Review

Fabrication of a wrinkled structure made of wearable polyacrylonitrile/polyurethane composite fibers with elastic sensing properties suitable for human movement detection

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

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Product

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Highly sensitive NO₂ sensors based on core‐shell array of silicon nanowires/polypyrrole and new insight into gas sensing mechanism of organic/inorganic hetero‐contact